Optical evidence for the impurity band nature of the metal-insulator transition in GaAs

Ming Way Lee, D. Romero, H. D. Drew, M. Shayegan, B. S. Elman

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Far infrared magneto transmission measurements on n-type GaAs doped near the metal-insulator transition show evidence for the impurity ls-2p± optical transition in both the insulating and the metallic states and no cyclotron resonance at low temperatures. The ls-2p± absorption line-shape varies smoothly through the magnetic field induced metal-insulator transition.

Original languageEnglish (US)
Pages (from-to)23-27
Number of pages5
JournalSolid State Communications
Volume66
Issue number1
DOIs
StatePublished - Apr 1988

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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