@article{29c7ef88dd754df789b8836e38606e0b,
title = "Optical evidence for the impurity band nature of the metal-insulator transition in GaAs",
abstract = "Far infrared magneto transmission measurements on n-type GaAs doped near the metal-insulator transition show evidence for the impurity ls-2p± optical transition in both the insulating and the metallic states and no cyclotron resonance at low temperatures. The ls-2p± absorption line-shape varies smoothly through the magnetic field induced metal-insulator transition.",
author = "Lee, {Ming Way} and D. Romero and Drew, {H. D.} and M. Shayegan and Elman, {B. S.}",
note = "Funding Information: AcknowledEements-Part of this work was performed while the authors were guests at the Francis Bitter National Magnet Laboratory, which is supported by the National Science Foundation We thank L Rubin and B Brandt for technical assistance We acknowledge support through NSF Grants DMR-8704670, DMR-8705002 and an NSF Presidential Young Investigator Award (Grant No EC8-8553110) and an IBM Faculty Development Award for M S Also we gratefully acknowledge useful discussions with D Belitz, V Goldman, J Jain, V Korenman, and D Larsen Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",
year = "1988",
month = apr,
doi = "10.1016/0038-1098(88)90484-X",
language = "English (US)",
volume = "66",
pages = "23--27",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "1",
}