Abstract
We show that undoped coupled quantum well structures of GaAs and InGaAs have a magnetoresistance effect which leads to a wavelength shift of the optical spectrum. This effect allows the optical emission to be used to detect magnetic field in the range 0-0.5 T.
| Original language | English (US) |
|---|---|
| Article number | 205304 |
| Pages (from-to) | 2053041-2053046 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 66 |
| Issue number | 20 |
| State | Published - Nov 15 2002 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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