Abstract
We present a method to evaluate the surface reflectivity and use it for Si(111)2 × 1. Beside the strong anisotropic peak at ≈0.5 eV, we discuss the origin of the structures observed experimentally in the range 1 ≲ h {combining short stroke overlay}ω ≲ 4 eV. We find that a large contribution to these structures comes from surface-assisted, bulk-like, non-direct transitions. A simplified model of surface dielectric tensor - valid in the range < {combining short stroke overlay}omega; ≲ 1 eV - is derived, and applied to discuss electron energy-loss spectra with various primary beam energies E0. In particular we suggest an interpretation of the double-peaked structure occuring at low E0 values.
Original language | English (US) |
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Pages (from-to) | 35-45 |
Number of pages | 11 |
Journal | Surface Science |
Volume | 168 |
Issue number | 1-3 |
DOIs | |
State | Published - Mar 3 1986 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry