Optical and electron energy-loss spectra of Si(111)2 × 1

A. Selloni, R. Del Sole

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

We present a method to evaluate the surface reflectivity and use it for Si(111)2 × 1. Beside the strong anisotropic peak at ≈0.5 eV, we discuss the origin of the structures observed experimentally in the range 1 ≲ h {combining short stroke overlay}ω ≲ 4 eV. We find that a large contribution to these structures comes from surface-assisted, bulk-like, non-direct transitions. A simplified model of surface dielectric tensor - valid in the range < {combining short stroke overlay}omega; ≲ 1 eV - is derived, and applied to discuss electron energy-loss spectra with various primary beam energies E0. In particular we suggest an interpretation of the double-peaked structure occuring at low E0 values.

Original languageEnglish (US)
Pages (from-to)35-45
Number of pages11
JournalSurface Science
Volume168
Issue number1-3
DOIs
StatePublished - Mar 3 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Optical and electron energy-loss spectra of Si(111)2 × 1'. Together they form a unique fingerprint.

Cite this