Optical and electrical properties of Si_1-x-yGe_xC_y thin films and devices

Engineering & Materials Science

• Capacitance measurement 23%
• Chemical vapor deposition 18%
• Degradation 11%
• Diodes 29%
• Electric properties 85%
• Energy gap 54%
• Heterojunction bipolar transistors 19%
• Heterojunctions 20%
• Microelectronics 17%
• Optical properties 100%
• Photoemission 28%
• Temperature 12%
• Thin films 75%
• Valence bands 28%

Chemical Compounds

• Application 12%
• Band Gap 60%
• Chemical Vapour Deposition 36%
• Electrical Property 67%
• Microelectronics 45%
• Optical Property 58%
• Photoemission 49%
• Subband 58%
• Valence Band 44%

Physics & Astronomy

• accumulators 15%
• bipolar transistors 17%
• capacitance 12%
• degradation 12%
• diodes 12%
• electrical properties 58%
• heterojunctions 28%
• leakage 13%
• microelectronics 16%
• optical properties 52%
• p-i-n diodes 21%
• photoelectric emission 13%
• temperature dependence 10%
• thin films 41%
• valence 11%
• vapor deposition 12%