Optical and electrical properties of Si_1-x-yGe_xC_y thin films and devices

Engineering

• Energy Gap 100%
• Thin Films 100%
• Heterojunctions 66%
• Temperature Dependence 33%
• Low-Temperature 33%
• Bipolar Transistor 33%
• Photoemission 33%
• Internals 33%
• Current Collector 33%
• Chemical Vapor Deposition 33%
• Vapor Deposition 33%
• Valence Band 33%
• Microelectronics 33%
• Reverse Bias 33%
• Capacitance Measurement 33%

Material Science

• Heterojunction 100%
• Optical Property 100%
• Thin Films 100%
• Bipolar Transistor 50%
• Chemical Vapor Deposition 50%
• Capacitance Measurement 50%

Keyphrases

• Downward Movement 50%
• Sub-bandgap Absorption 50%