Optical alignment and resonant Raman scattering in GaAs/AlxGa1-xAs multiple quantum wells

A. Frommer; E. Cohen; Arza Ron; L. Pfeiffer

doi:10.1016/0022-2313(92)90171-5

Optical alignment and resonant Raman scattering in GaAs/Al_xGa_1-xAs multiple quantum wells

A. Frommer, E. Cohen, Arza Ron, L. Pfeiffer

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the linear polarization of selectively created excitons and the LO-phonon resonant Raman scattering of GaAs/Al_xGa_1-xAs quantum wells. The low temperature optical alignment and RRS profile are interpreted in terms of a model based on exciton dephasing due to scattering within and between regions of lateral localization of the quantum well ("interface islands"). Good fits to the experimental results are obtained with an exciton relaxation time among states within the same island of ∼ 15 ps and an exciton transfer time from the narrow to the wide regions of ∼ ps. We find that the former process is a polarization conserving one and the latter is not.

Original language	English (US)
Pages (from-to)	351-354
Number of pages	4
Journal	Journal of Luminescence
Volume	53
Issue number	1-6
DOIs	https://doi.org/10.1016/0022-2313(92)90171-5
State	Published - Jul 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Biophysics
Atomic and Molecular Physics, and Optics
General Chemistry
Biochemistry
Condensed Matter Physics

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10.1016/0022-2313(92)90171-5

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title = "Optical alignment and resonant Raman scattering in GaAs/AlxGa1-xAs multiple quantum wells",

abstract = "We have studied the linear polarization of selectively created excitons and the LO-phonon resonant Raman scattering of GaAs/AlxGa1-xAs quantum wells. The low temperature optical alignment and RRS profile are interpreted in terms of a model based on exciton dephasing due to scattering within and between regions of lateral localization of the quantum well ({"}interface islands{"}). Good fits to the experimental results are obtained with an exciton relaxation time among states within the same island of ∼ 15 ps and an exciton transfer time from the narrow to the wide regions of ∼ ps. We find that the former process is a polarization conserving one and the latter is not.",

author = "A. Frommer and E. Cohen and Arza Ron and L. Pfeiffer",

year = "1992",

month = jul,

doi = "10.1016/0022-2313(92)90171-5",

language = "English (US)",

volume = "53",

pages = "351--354",

journal = "Journal of Luminescence",

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T1 - Optical alignment and resonant Raman scattering in GaAs/AlxGa1-xAs multiple quantum wells

AU - Frommer, A.

AU - Cohen, E.

AU - Ron, Arza

AU - Pfeiffer, L.

PY - 1992/7

Y1 - 1992/7

N2 - We have studied the linear polarization of selectively created excitons and the LO-phonon resonant Raman scattering of GaAs/AlxGa1-xAs quantum wells. The low temperature optical alignment and RRS profile are interpreted in terms of a model based on exciton dephasing due to scattering within and between regions of lateral localization of the quantum well ("interface islands"). Good fits to the experimental results are obtained with an exciton relaxation time among states within the same island of ∼ 15 ps and an exciton transfer time from the narrow to the wide regions of ∼ ps. We find that the former process is a polarization conserving one and the latter is not.

AB - We have studied the linear polarization of selectively created excitons and the LO-phonon resonant Raman scattering of GaAs/AlxGa1-xAs quantum wells. The low temperature optical alignment and RRS profile are interpreted in terms of a model based on exciton dephasing due to scattering within and between regions of lateral localization of the quantum well ("interface islands"). Good fits to the experimental results are obtained with an exciton relaxation time among states within the same island of ∼ 15 ps and an exciton transfer time from the narrow to the wide regions of ∼ ps. We find that the former process is a polarization conserving one and the latter is not.

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SN - 0022-2313

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SP - 351

EP - 354

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1-6

ER -

Optical alignment and resonant Raman scattering in GaAs/Al_xGa_1-xAs multiple quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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