One-component to two-component transitions of fractional quantum Hall states in a wide quantum well

Y. W. Suen, H. C. Manoharan, X. Ying, M. B. Santos, M. Shayegan

Research output: Contribution to journalArticle

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Abstract

We report measurements of the quasi-particle excitation gaps for different fractional quantum Hall (FQH) states of a low-disorder, symmetric electron system in a 770 Å wide GaAs quantum well as a function of density, Ns. At filling factor v = 1 2, the electron system undergoes phase transitions from a compressible (metallic) state to an incompressible (FQH) state and then to an insulating phase as Ns is increased. The v = 1 2 FQH state, observed in the range 1.0 × 1011Ns{1.4 × 1011cm-2}, is remarkably strong and its excitation gap reaches≅0.9 K at Ns = 1.16 × 1011cm-2. Our data suggest that this 1 2 FQH state has a two-component origin. We also observe a dramatic transition from a one-component to a two-component FQH state at v = 2 3 as Ns is increased.

Original languageEnglish (US)
Pages (from-to)13-17
Number of pages5
JournalSurface Science
Volume305
Issue number1-3
DOIs
StatePublished - Mar 20 1994

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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