One-component to two-component transitions of fractional quantum Hall states in a wide quantum well

Y. W. Suen; H. C. Manoharan; X. Ying; M. B. Santos; M. Shayegan

doi:10.1016/0039-6028(94)90852-4

One-component to two-component transitions of fractional quantum Hall states in a wide quantum well

Y. W. Suen, H. C. Manoharan, X. Ying, M. B. Santos, M. Shayegan

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Abstract

We report measurements of the quasi-particle excitation gaps for different fractional quantum Hall (FQH) states of a low-disorder, symmetric electron system in a 770 Å wide GaAs quantum well as a function of density, N_s. At filling factor v = 1 2, the electron system undergoes phase transitions from a compressible (metallic) state to an incompressible (FQH) state and then to an insulating phase as N_s is increased. The v = 1 2 FQH state, observed in the range 1.0 × 10¹¹N_s{1.4 × 10¹¹cm^-2}, is remarkably strong and its excitation gap reaches≅0.9 K at N_s = 1.16 × 10¹¹cm-2. Our data suggest that this 1 2 FQH state has a two-component origin. We also observe a dramatic transition from a one-component to a two-component FQH state at v = 2 3 as N_s is increased.

Original language	English (US)
Pages (from-to)	13-17
Number of pages	5
Journal	Surface Science
Volume	305
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(94)90852-4
State	Published - Mar 20 1994

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)90852-4

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@article{e3cc514e5a304c0482a88e05e8ce6d5c,

title = "One-component to two-component transitions of fractional quantum Hall states in a wide quantum well",

abstract = "We report measurements of the quasi-particle excitation gaps for different fractional quantum Hall (FQH) states of a low-disorder, symmetric electron system in a 770 {\AA} wide GaAs quantum well as a function of density, Ns. At filling factor v = 1 2, the electron system undergoes phase transitions from a compressible (metallic) state to an incompressible (FQH) state and then to an insulating phase as Ns is increased. The v = 1 2 FQH state, observed in the range 1.0 × 1011Ns{1.4 × 1011cm-2}, is remarkably strong and its excitation gap reaches≅0.9 K at Ns = 1.16 × 1011cm-2. Our data suggest that this 1 2 FQH state has a two-component origin. We also observe a dramatic transition from a one-component to a two-component FQH state at v = 2 3 as Ns is increased.",

author = "Suen, {Y. W.} and Manoharan, {H. C.} and X. Ying and Santos, {M. B.} and M. Shayegan",

note = "Funding Information: We thank D.C. Tsui and S. He for informative discussions, and L.W. Engel for technical assistance. H.C. Manoharan acknowledges fellowship support from the Fannie and John Hertz Foundation. This work was supported by the National Science Foundation.",

year = "1994",

month = mar,

day = "20",

doi = "10.1016/0039-6028(94)90852-4",

language = "English (US)",

volume = "305",

pages = "13--17",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-3",

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TY - JOUR

T1 - One-component to two-component transitions of fractional quantum Hall states in a wide quantum well

AU - Suen, Y. W.

AU - Manoharan, H. C.

AU - Ying, X.

AU - Santos, M. B.

AU - Shayegan, M.

N1 - Funding Information: We thank D.C. Tsui and S. He for informative discussions, and L.W. Engel for technical assistance. H.C. Manoharan acknowledges fellowship support from the Fannie and John Hertz Foundation. This work was supported by the National Science Foundation.

PY - 1994/3/20

Y1 - 1994/3/20

N2 - We report measurements of the quasi-particle excitation gaps for different fractional quantum Hall (FQH) states of a low-disorder, symmetric electron system in a 770 Å wide GaAs quantum well as a function of density, Ns. At filling factor v = 1 2, the electron system undergoes phase transitions from a compressible (metallic) state to an incompressible (FQH) state and then to an insulating phase as Ns is increased. The v = 1 2 FQH state, observed in the range 1.0 × 1011Ns{1.4 × 1011cm-2}, is remarkably strong and its excitation gap reaches≅0.9 K at Ns = 1.16 × 1011cm-2. Our data suggest that this 1 2 FQH state has a two-component origin. We also observe a dramatic transition from a one-component to a two-component FQH state at v = 2 3 as Ns is increased.

AB - We report measurements of the quasi-particle excitation gaps for different fractional quantum Hall (FQH) states of a low-disorder, symmetric electron system in a 770 Å wide GaAs quantum well as a function of density, Ns. At filling factor v = 1 2, the electron system undergoes phase transitions from a compressible (metallic) state to an incompressible (FQH) state and then to an insulating phase as Ns is increased. The v = 1 2 FQH state, observed in the range 1.0 × 1011Ns{1.4 × 1011cm-2}, is remarkably strong and its excitation gap reaches≅0.9 K at Ns = 1.16 × 1011cm-2. Our data suggest that this 1 2 FQH state has a two-component origin. We also observe a dramatic transition from a one-component to a two-component FQH state at v = 2 3 as Ns is increased.

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U2 - 10.1016/0039-6028(94)90852-4

DO - 10.1016/0039-6028(94)90852-4

M3 - Article

AN - SCOPUS:0028397059

SN - 0039-6028

VL - 305

SP - 13

EP - 17

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

One-component to two-component transitions of fractional quantum Hall states in a wide quantum well

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