One-band density of states for the polk model for amorphous tetrahedrally bonded semiconductors

R. Alben; D. Weaire; P. Steinhardt

doi:10.1088/0022-3719/6/20/003

One-band density of states for the polk model for amorphous tetrahedrally bonded semiconductors

R. Alben, D. Weaire, P. Steinhardt

Research output: Contribution to journal › Letter › peer-review

14 Scopus citations

Abstract

The one-band density of states for the Polk model for amorphous semiconductors is found by direct diagonalization for a 201-atom structure and some smaller structures. It is seen that the density of states has a definite two-peaked character. Implications for the lower half of the valence band and the middle portion of the vibrational density of states in amorphous silicon and germanium are discussed.

Original language	English (US)
Pages (from-to)	384-386
Number of pages	3
Journal	Journal of physics C: Solid State Physics
Volume	6
Issue number	20
DOIs	https://doi.org/10.1088/0022-3719/6/20/003
State	Published - Oct 16 1973
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
General Engineering
General Physics and Astronomy

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10.1088/0022-3719/6/20/003

Cite this

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title = "One-band density of states for the polk model for amorphous tetrahedrally bonded semiconductors",

abstract = "The one-band density of states for the Polk model for amorphous semiconductors is found by direct diagonalization for a 201-atom structure and some smaller structures. It is seen that the density of states has a definite two-peaked character. Implications for the lower half of the valence band and the middle portion of the vibrational density of states in amorphous silicon and germanium are discussed.",

author = "R. Alben and D. Weaire and P. Steinhardt",

year = "1973",

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day = "16",

doi = "10.1088/0022-3719/6/20/003",

language = "English (US)",

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pages = "384--386",

journal = "Journal of physics C: Solid State Physics",

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T1 - One-band density of states for the polk model for amorphous tetrahedrally bonded semiconductors

AU - Alben, R.

AU - Weaire, D.

AU - Steinhardt, P.

PY - 1973/10/16

Y1 - 1973/10/16

N2 - The one-band density of states for the Polk model for amorphous semiconductors is found by direct diagonalization for a 201-atom structure and some smaller structures. It is seen that the density of states has a definite two-peaked character. Implications for the lower half of the valence band and the middle portion of the vibrational density of states in amorphous silicon and germanium are discussed.

AB - The one-band density of states for the Polk model for amorphous semiconductors is found by direct diagonalization for a 201-atom structure and some smaller structures. It is seen that the density of states has a definite two-peaked character. Implications for the lower half of the valence band and the middle portion of the vibrational density of states in amorphous silicon and germanium are discussed.

UR - https://www.scopus.com/pages/publications/35949044031

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U2 - 10.1088/0022-3719/6/20/003

DO - 10.1088/0022-3719/6/20/003

M3 - Letter

AN - SCOPUS:35949044031

SN - 0022-3719

VL - 6

SP - 384

EP - 386

JO - Journal of physics C: Solid State Physics

JF - Journal of physics C: Solid State Physics

IS - 20

ER -

One-band density of states for the polk model for amorphous tetrahedrally bonded semiconductors

Abstract

All Science Journal Classification (ASJC) codes

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