One-band density of states for the polk model for amorphous tetrahedrally bonded semiconductors

R. Alben, D. Weaire, P. Steinhardt

Research output: Contribution to journalLetter

14 Scopus citations

Abstract

The one-band density of states for the Polk model for amorphous semiconductors is found by direct diagonalization for a 201-atom structure and some smaller structures. It is seen that the density of states has a definite two-peaked character. Implications for the lower half of the valence band and the middle portion of the vibrational density of states in amorphous silicon and germanium are discussed.

Original languageEnglish (US)
Pages (from-to)384-386
Number of pages3
JournalJournal of physics C: Solid State Physics
Volume6
Issue number20
DOIs
StatePublished - Oct 16 1973
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'One-band density of states for the polk model for amorphous tetrahedrally bonded semiconductors'. Together they form a unique fingerprint.

  • Cite this