Abstract
The one-band density of states for the Polk model for amorphous semiconductors is found by direct diagonalization for a 201-atom structure and some smaller structures. It is seen that the density of states has a definite two-peaked character. Implications for the lower half of the valence band and the middle portion of the vibrational density of states in amorphous silicon and germanium are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 384-386 |
| Number of pages | 3 |
| Journal | Journal of physics C: Solid State Physics |
| Volume | 6 |
| Issue number | 20 |
| DOIs | |
| State | Published - Oct 16 1973 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Engineering(all)
- Physics and Astronomy(all)