On the vertical stacking in semiconducting WSe2 bilayers

A. M. Sanchez, J. J.P. Peters, S. Wu, C. Huang, D. Cobden, X. Xu, R. Beanland

Research output: Contribution to journalArticle

Abstract

The vertical stacking in semiconducting WSe2 bilayers grown by physical vapour transport was studied using atomic resolution annular dark field imaging. Our results show that the most common geometry was consistent with AA′, the most stable configuration. However in some areas AB alignment was also observed, as expected due to the small energy difference between AA′ and AB. Additionally, two different rotational stacking orientations were observed, with rotation angles of 12 and 21°. These different vertical WSe2 bilayers could provide a means of engineering electronic band structure for specific optoelectronic properties.

Original languageEnglish (US)
Pages (from-to)226-231
Number of pages6
JournalMaterials Science and Technology (United Kingdom)
Volume32
Issue number3
DOIs
StatePublished - 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Aberration-corrected stem
  • Dichalcogenides
  • Heterojunction
  • Mose2
  • Semiconductor
  • WSe2

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  • Cite this

    Sanchez, A. M., Peters, J. J. P., Wu, S., Huang, C., Cobden, D., Xu, X., & Beanland, R. (2016). On the vertical stacking in semiconducting WSe2 bilayers. Materials Science and Technology (United Kingdom), 32(3), 226-231. https://doi.org/10.1080/02670836.2016.1154696