On the vertical stacking in semiconducting WSe2 bilayers

A. M. Sanchez; J. J.P. Peters; S. Wu; C. Huang; D. Cobden; X. Xu; R. Beanland

doi:10.1080/02670836.2016.1154696

On the vertical stacking in semiconducting WSe2 bilayers

A. M. Sanchez, J. J.P. Peters, S. Wu, C. Huang, D. Cobden, X. Xu, R. Beanland

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The vertical stacking in semiconducting WSe2 bilayers grown by physical vapour transport was studied using atomic resolution annular dark field imaging. Our results show that the most common geometry was consistent with AA′, the most stable configuration. However in some areas AB alignment was also observed, as expected due to the small energy difference between AA′ and AB. Additionally, two different rotational stacking orientations were observed, with rotation angles of 12 and 21°. These different vertical WSe2 bilayers could provide a means of engineering electronic band structure for specific optoelectronic properties.

Original language	English (US)
Pages (from-to)	226-231
Number of pages	6
Journal	Materials Science and Technology (United Kingdom)
Volume	32
Issue number	3
DOIs	https://doi.org/10.1080/02670836.2016.1154696
State	Published - 2016
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Aberration-corrected stem
Dichalcogenides
Heterojunction
Mose2
Semiconductor
WSe2

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10.1080/02670836.2016.1154696

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title = "On the vertical stacking in semiconducting WSe2 bilayers",

abstract = "The vertical stacking in semiconducting WSe2 bilayers grown by physical vapour transport was studied using atomic resolution annular dark field imaging. Our results show that the most common geometry was consistent with AA′, the most stable configuration. However in some areas AB alignment was also observed, as expected due to the small energy difference between AA′ and AB. Additionally, two different rotational stacking orientations were observed, with rotation angles of 12 and 21°. These different vertical WSe2 bilayers could provide a means of engineering electronic band structure for specific optoelectronic properties.",

keywords = "Aberration-corrected stem, Dichalcogenides, Heterojunction, Mose2, Semiconductor, WSe2",

author = "Sanchez, {A. M.} and Peters, {J. J.P.} and S. Wu and C. Huang and D. Cobden and X. Xu and R. Beanland",

note = "Publisher Copyright: {\textcopyright} 2016 Institute of Materials.",

year = "2016",

doi = "10.1080/02670836.2016.1154696",

language = "English (US)",

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pages = "226--231",

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T1 - On the vertical stacking in semiconducting WSe2 bilayers

AU - Sanchez, A. M.

AU - Peters, J. J.P.

AU - Wu, S.

AU - Huang, C.

AU - Cobden, D.

AU - Xu, X.

AU - Beanland, R.

PY - 2016

Y1 - 2016

N2 - The vertical stacking in semiconducting WSe2 bilayers grown by physical vapour transport was studied using atomic resolution annular dark field imaging. Our results show that the most common geometry was consistent with AA′, the most stable configuration. However in some areas AB alignment was also observed, as expected due to the small energy difference between AA′ and AB. Additionally, two different rotational stacking orientations were observed, with rotation angles of 12 and 21°. These different vertical WSe2 bilayers could provide a means of engineering electronic band structure for specific optoelectronic properties.

AB - The vertical stacking in semiconducting WSe2 bilayers grown by physical vapour transport was studied using atomic resolution annular dark field imaging. Our results show that the most common geometry was consistent with AA′, the most stable configuration. However in some areas AB alignment was also observed, as expected due to the small energy difference between AA′ and AB. Additionally, two different rotational stacking orientations were observed, with rotation angles of 12 and 21°. These different vertical WSe2 bilayers could provide a means of engineering electronic band structure for specific optoelectronic properties.

KW - Aberration-corrected stem

KW - Dichalcogenides

KW - Heterojunction

KW - Mose2

KW - Semiconductor

KW - WSe2

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JO - Materials Science and Technology (United Kingdom)

JF - Materials Science and Technology (United Kingdom)

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ER -

On the vertical stacking in semiconducting WSe2 bilayers

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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