On the vertical stacking in semiconducting WSe2 bilayers

A. M. Sanchez, J. J.P. Peters, S. Wu, C. Huang, D. Cobden, X. Xu, R. Beanland

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The vertical stacking in semiconducting WSe2 bilayers grown by physical vapour transport was studied using atomic resolution annular dark field imaging. Our results show that the most common geometry was consistent with AA′, the most stable configuration. However in some areas AB alignment was also observed, as expected due to the small energy difference between AA′ and AB. Additionally, two different rotational stacking orientations were observed, with rotation angles of 12 and 21°. These different vertical WSe2 bilayers could provide a means of engineering electronic band structure for specific optoelectronic properties.

Original languageEnglish (US)
Pages (from-to)226-231
Number of pages6
JournalMaterials Science and Technology (United Kingdom)
Issue number3
StatePublished - 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • Aberration-corrected stem
  • Dichalcogenides
  • Heterojunction
  • Mose2
  • Semiconductor
  • WSe2


Dive into the research topics of 'On the vertical stacking in semiconducting WSe2 bilayers'. Together they form a unique fingerprint.

Cite this