It is shown that localized states within a gap between valence and conduction bands have either purely conduction or purely valence band parentage even for strong band mixing by the impurity. The demonstration is by direct numerical calculation for a very simple model as well as by argument. Our conclusions tend to confirm the assumptions of Cohen, Fritzsche and Ovshinsky in their model of covalent amorphous semiconducting alloys.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry