On the question of parentage of localized states

G. Srinivasan; Morrel H. Cohen

doi:10.1016/0022-3093(70)90007-4

On the question of parentage of localized states

G. Srinivasan, Morrel H. Cohen

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

It is shown that localized states within a gap between valence and conduction bands have either purely conduction or purely valence band parentage even for strong band mixing by the impurity. The demonstration is by direct numerical calculation for a very simple model as well as by argument. Our conclusions tend to confirm the assumptions of Cohen, Fritzsche and Ovshinsky in their model of covalent amorphous semiconducting alloys.

Original language	English (US)
Pages (from-to)	393-401
Number of pages	9
Journal	Journal of Non-Crystalline Solids
Volume	3
Issue number	4
DOIs	https://doi.org/10.1016/0022-3093(70)90007-4
State	Published - Jul 1970
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(70)90007-4

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title = "On the question of parentage of localized states",

abstract = "It is shown that localized states within a gap between valence and conduction bands have either purely conduction or purely valence band parentage even for strong band mixing by the impurity. The demonstration is by direct numerical calculation for a very simple model as well as by argument. Our conclusions tend to confirm the assumptions of Cohen, Fritzsche and Ovshinsky in their model of covalent amorphous semiconducting alloys.",

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AU - Cohen, Morrel H.

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N2 - It is shown that localized states within a gap between valence and conduction bands have either purely conduction or purely valence band parentage even for strong band mixing by the impurity. The demonstration is by direct numerical calculation for a very simple model as well as by argument. Our conclusions tend to confirm the assumptions of Cohen, Fritzsche and Ovshinsky in their model of covalent amorphous semiconducting alloys.

AB - It is shown that localized states within a gap between valence and conduction bands have either purely conduction or purely valence band parentage even for strong band mixing by the impurity. The demonstration is by direct numerical calculation for a very simple model as well as by argument. Our conclusions tend to confirm the assumptions of Cohen, Fritzsche and Ovshinsky in their model of covalent amorphous semiconducting alloys.

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DO - 10.1016/0022-3093(70)90007-4

M3 - Article

AN - SCOPUS:49849109081

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JF - Journal of Non-Crystalline Solids

IS - 4

ER -

On the question of parentage of localized states

Abstract

All Science Journal Classification (ASJC) codes

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