On the hall resistivity of nHgCdTe

H. D. Drew; V. J. Goldman; Mansour Shayegan

doi:10.1016/0038-1098(87)90855-6

On the hall resistivity of nHgCdTe

H. D. Drew, V. J. Goldman, Mansour Shayegan

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We discuss the measurements of the Hall resistivity of nHgCdTe and InSb which have demonstrated the similarity of the electronic properties of these two materials. Gebhardt and Nimitz [1] dispute the validity of our results. We cite the evidence that confirms the correctness of our original observations.

Original language	English (US)
Pages (from-to)	575-576
Number of pages	2
Journal	Solid State Communications
Volume	63
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(87)90855-6
State	Published - Jan 1 1987

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/0038-1098(87)90855-6

Cite this

@article{936bc8ff525947bda095e37ef08fbafb,

title = "On the hall resistivity of nHgCdTe",

abstract = "We discuss the measurements of the Hall resistivity of nHgCdTe and InSb which have demonstrated the similarity of the electronic properties of these two materials. Gebhardt and Nimitz [1] dispute the validity of our results. We cite the evidence that confirms the correctness of our original observations.",

author = "Drew, {H. D.} and Goldman, {V. J.} and Mansour Shayegan",

year = "1987",

month = jan,

day = "1",

doi = "10.1016/0038-1098(87)90855-6",

language = "English (US)",

volume = "63",

pages = "575--576",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - On the hall resistivity of nHgCdTe

AU - Drew, H. D.

AU - Goldman, V. J.

AU - Shayegan, Mansour

PY - 1987/1/1

Y1 - 1987/1/1

N2 - We discuss the measurements of the Hall resistivity of nHgCdTe and InSb which have demonstrated the similarity of the electronic properties of these two materials. Gebhardt and Nimitz [1] dispute the validity of our results. We cite the evidence that confirms the correctness of our original observations.

AB - We discuss the measurements of the Hall resistivity of nHgCdTe and InSb which have demonstrated the similarity of the electronic properties of these two materials. Gebhardt and Nimitz [1] dispute the validity of our results. We cite the evidence that confirms the correctness of our original observations.

UR - http://www.scopus.com/inward/record.url?scp=0023396569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023396569&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(87)90855-6

DO - 10.1016/0038-1098(87)90855-6

M3 - Article

AN - SCOPUS:0023396569

SN - 0038-1098

VL - 63

SP - 575

EP - 576

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

On the hall resistivity of nHgCdTe

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this