On the active surface layer in CF3+ etching of Si: atomistic simulation and a simple mass balance model

Cameron F. Abrams; David B. Graves

doi:10.1116/1.582202

On the active surface layer in CF₃⁺ etching of Si: atomistic simulation and a simple mass balance model

Cameron F. Abrams, David B. Graves

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Molecular dynamic simulations of CF₃⁺ ion bombardment of Si were carried out, focusing on the steady-state fluorocarbosilyl mixing layer that forms in the near-surface region during Si etching. Ion energy increased with the increase of the thickness of the mixing layer. A simple transient mass balance model correctly predicted the evolution of mixing layer atomic concentrations.

Original language	English (US)
Pages (from-to)	411-416
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.582202
State	Published - Mar 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.582202

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abstract = "Molecular dynamic simulations of CF3+ ion bombardment of Si were carried out, focusing on the steady-state fluorocarbosilyl mixing layer that forms in the near-surface region during Si etching. Ion energy increased with the increase of the thickness of the mixing layer. A simple transient mass balance model correctly predicted the evolution of mixing layer atomic concentrations.",

author = "Abrams, \{Cameron F.\} and Graves, \{David B.\}",

year = "2000",

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AU - Graves, David B.

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N2 - Molecular dynamic simulations of CF3+ ion bombardment of Si were carried out, focusing on the steady-state fluorocarbosilyl mixing layer that forms in the near-surface region during Si etching. Ion energy increased with the increase of the thickness of the mixing layer. A simple transient mass balance model correctly predicted the evolution of mixing layer atomic concentrations.

AB - Molecular dynamic simulations of CF3+ ion bombardment of Si were carried out, focusing on the steady-state fluorocarbosilyl mixing layer that forms in the near-surface region during Si etching. Ion energy increased with the increase of the thickness of the mixing layer. A simple transient mass balance model correctly predicted the evolution of mixing layer atomic concentrations.

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ER -

On the active surface layer in CF₃⁺ etching of Si: atomistic simulation and a simple mass balance model

Abstract

All Science Journal Classification (ASJC) codes

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