On the active surface layer in CF3+ etching of Si: atomistic simulation and a simple mass balance model

Cameron F. Abrams; David B. Graves

doi:10.1116/1.582202

On the active surface layer in CF₃⁺ etching of Si: atomistic simulation and a simple mass balance model

Cameron F. Abrams, David B. Graves

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Molecular dynamic simulations of CF₃⁺ ion bombardment of Si were carried out, focusing on the steady-state fluorocarbosilyl mixing layer that forms in the near-surface region during Si etching. Ion energy increased with the increase of the thickness of the mixing layer. A simple transient mass balance model correctly predicted the evolution of mixing layer atomic concentrations.

Original language	English (US)
Pages (from-to)	411-416
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.582202
State	Published - Mar 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.582202

Cite this

@article{cab695e251be45a2853bf33bfe1fc042,

title = "On the active surface layer in CF3+ etching of Si: atomistic simulation and a simple mass balance model",

abstract = "Molecular dynamic simulations of CF3+ ion bombardment of Si were carried out, focusing on the steady-state fluorocarbosilyl mixing layer that forms in the near-surface region during Si etching. Ion energy increased with the increase of the thickness of the mixing layer. A simple transient mass balance model correctly predicted the evolution of mixing layer atomic concentrations.",

author = "Abrams, {Cameron F.} and Graves, {David B.}",

year = "2000",

month = mar,

doi = "10.1116/1.582202",

language = "English (US)",

volume = "18",

pages = "411--416",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - On the active surface layer in CF3+ etching of Si

T2 - atomistic simulation and a simple mass balance model

AU - Abrams, Cameron F.

AU - Graves, David B.

PY - 2000/3

Y1 - 2000/3

N2 - Molecular dynamic simulations of CF3+ ion bombardment of Si were carried out, focusing on the steady-state fluorocarbosilyl mixing layer that forms in the near-surface region during Si etching. Ion energy increased with the increase of the thickness of the mixing layer. A simple transient mass balance model correctly predicted the evolution of mixing layer atomic concentrations.

AB - Molecular dynamic simulations of CF3+ ion bombardment of Si were carried out, focusing on the steady-state fluorocarbosilyl mixing layer that forms in the near-surface region during Si etching. Ion energy increased with the increase of the thickness of the mixing layer. A simple transient mass balance model correctly predicted the evolution of mixing layer atomic concentrations.

UR - http://www.scopus.com/inward/record.url?scp=0034155683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034155683&partnerID=8YFLogxK

U2 - 10.1116/1.582202

DO - 10.1116/1.582202

M3 - Article

AN - SCOPUS:0034155683

SN - 0734-2101

VL - 18

SP - 411

EP - 416

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

ER -

On the active surface layer in CF₃⁺ etching of Si: atomistic simulation and a simple mass balance model

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this