Abstract
This paper presents various low power, compact, low insertion-loss sensors with digitized ADC output and digitally controlled actuation methods for on-chip characterization and healing of a mm-Wave power amplifier. We demonstrate low insertion loss (0.4dB) RF sensors which measure true input and output power in presence of load variations and very low-headroom (10-30mV) DC sensors with built-in regulators and thermal sensors as methods for measuring PA efficiency. All sensor outputs are digitized by a SAR-based ADC for communication with a central digital core. The paper also presents digitally controlled combiner tuning and PA bias actuation. The circuits are implemented in 45 nm SOI CMOS and enable full on-chip digitally controlled characterization and actuation of the PA with a power overhead of less than 6%.
Original language | English (US) |
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Title of host publication | IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium |
DOIs | |
State | Published - Oct 3 2012 |
Externally published | Yes |
Event | 2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada Duration: Jun 17 2012 → Jun 22 2012 |
Other
Other | 2012 IEEE MTT-S International Microwave Symposium, IMS 2012 |
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Country/Territory | Canada |
City | Montreal, QC |
Period | 6/17/12 → 6/22/12 |
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering