Abstract
On-chip assembly of silicon photonic band gap crystals was presented. A planar (111) surface was exposed to reactive ion etching to perform optical measurements. Near unity reflectance was observed both in the region of the lower order stop band (frequency ∼0.45) and in the vicinity of the bandgap (frequency ∼0.8).
Original language | English (US) |
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Pages | 300-301 |
Number of pages | 2 |
State | Published - 2002 |
Event | Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States Duration: May 19 2002 → May 24 2002 |
Other
Other | Conference on Lasers and Electro-Optics (CLEO 2002) |
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Country/Territory | United States |
City | Long Beach, CA |
Period | 5/19/02 → 5/24/02 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering