TY - JOUR
T1 - Ohm's law for hot carriers
T2 - The role of carrier-carrier scattering at high fields
AU - Wingreen, Ned S.
AU - Combescot, Monique
N1 - Funding Information:
Acknowledgements - This work was supported by the C.N.R.S. and the U.S. Office of Naval Research. One of us (N.S.W.) gratefully acknowledges the support of the Fannie and John Hertz Foundation and the University Pierre and Marie Curie of Paris.
PY - 1989/4
Y1 - 1989/4
N2 - A large electric field version of Ohm's law is presented for non-polar semiconductors including a carrier-carrier scattering time τ*. Both the drift momentum 〈k〉 and average carrier energy 〈E〉 decrease with τ*, but only slightly. Nothing that for carrier-carrier scattering as fast as carrier-phonon scattering, the spherical part of the distribution function is well approximated by a Gaussian at all fields, we obtain an expression for 〈k〉 and 〈E〉 in good agreement with the exact numerical results over the entire range of electric fields.
AB - A large electric field version of Ohm's law is presented for non-polar semiconductors including a carrier-carrier scattering time τ*. Both the drift momentum 〈k〉 and average carrier energy 〈E〉 decrease with τ*, but only slightly. Nothing that for carrier-carrier scattering as fast as carrier-phonon scattering, the spherical part of the distribution function is well approximated by a Gaussian at all fields, we obtain an expression for 〈k〉 and 〈E〉 in good agreement with the exact numerical results over the entire range of electric fields.
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U2 - 10.1016/0038-1098(89)90971-X
DO - 10.1016/0038-1098(89)90971-X
M3 - Article
AN - SCOPUS:0024648783
VL - 70
SP - 185
EP - 189
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 2
ER -