n-channel MOSFETs with channel lengths from 60 nm to 5 mu m were fabricated in Si using combined optical and X-ray lithography, and were characterized at 300, 77, and 4. 2 K. For this study the gate structure was not self-aligned. Instead, PMMA resist lines were used to mask the channel during source-drain implantation with As. Taking the parasitic resistance into account, we derive an intrinsic transconductance for our 80-nm devices of 250 mS/mm. Experimental results strongly suggest velocity overshoot in the 75-nm-channel-length MOSFET.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering