OBSERVATION OF VELOCITY OVERSHOOT IN DEEP SUBMICROMETER (0. 08 mu m) CHANNEL MOSFETs IN Si.

Stephen Y. Chou, D. A. Antoniadis, Henry I. Smith

Research output: Contribution to journalConference articlepeer-review

Abstract

n-channel MOSFETs with channel lengths from 60 nm to 5 mu m were fabricated in Si using combined optical and X-ray lithography, and were characterized at 300, 77, and 4. 2 K. For this study the gate structure was not self-aligned. Instead, PMMA resist lines were used to mask the channel during source-drain implantation with As. Taking the parasitic resistance into account, we derive an intrinsic transconductance for our 80-nm devices of 250 mS/mm. Experimental results strongly suggest velocity overshoot in the 75-nm-channel-length MOSFET.

Original languageEnglish (US)
Number of pages1
JournalIEEE Transactions on Electron Devices
VolumeED-32
Issue number11
StatePublished - Nov 1 1985
Externally publishedYes
Event43rd Annu Device Res Conf - Boulder, CO, USA
Duration: Jun 17 1985Jun 19 1985

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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