Observation of time-reversal-protected single-dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3

D. Hsieh; Y. Xia; D. Qian; L. Wray; F. Meier; J. H. Dil; J. Osterwalder; L. Patthey; A. V. Fedorov; H. Lin; A. Bansil; D. Grauer; Y. S. Hor; R. J. Cava; M. Z. Hasan

doi:10.1103/PhysRevLett.103.146401

Observation of time-reversal-protected single-dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3

D. Hsieh, Y. Xia, D. Qian, L. Wray, F. Meier, J. H. Dil, J. Osterwalder, L. Patthey, A. V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, M. Z. Hasan

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Abstract

We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 and their derivatives belong to the Z2 topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (δ∼150meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.

Original language	English (US)
Article number	146401
Journal	Physical review letters
Volume	103
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevLett.103.146401
State	Published - Sep 28 2009

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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Hsieh, D., Xia, Y., Qian, D., Wray, L., Meier, F., Dil, J. H., Osterwalder, J., Patthey, L., Fedorov, A. V., Lin, H., Bansil, A., Grauer, D., Hor, Y. S., Cava, R. J., & Hasan, M. Z. (2009). Observation of time-reversal-protected single-dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3. Physical review letters, 103(14), Article 146401. https://doi.org/10.1103/PhysRevLett.103.146401

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title = "Observation of time-reversal-protected single-dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3",

abstract = "We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 and their derivatives belong to the Z2 topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (δ∼150meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.",

author = "D. Hsieh and Y. Xia and D. Qian and L. Wray and F. Meier and Dil, {J. H.} and J. Osterwalder and L. Patthey and Fedorov, {A. V.} and H. Lin and A. Bansil and D. Grauer and Hor, {Y. S.} and Cava, {R. J.} and Hasan, {M. Z.}",

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AU - Hsieh, D.

AU - Xia, Y.

AU - Qian, D.

AU - Wray, L.

AU - Meier, F.

AU - Dil, J. H.

AU - Osterwalder, J.

AU - Patthey, L.

AU - Fedorov, A. V.

AU - Lin, H.

AU - Bansil, A.

AU - Grauer, D.

AU - Hor, Y. S.

AU - Cava, R. J.

AU - Hasan, M. Z.

PY - 2009/9/28

Y1 - 2009/9/28

N2 - We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 and their derivatives belong to the Z2 topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (δ∼150meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.

AB - We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 and their derivatives belong to the Z2 topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (δ∼150meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.

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Observation of time-reversal-protected single-dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3

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