Observation of reentrant phases induced by short-range disorder in the lowest Landau level of AlxGa1-xAs/Al0.32Ga 0.68As Heterostructures

Wanli Li; D. R. Luhman; D. C. Tsui; L. N. Pfeiffer; K. W. West

doi:10.1103/PhysRevLett.105.076803

Observation of reentrant phases induced by short-range disorder in the lowest Landau level of Al_xGa_1-xAs/Al_0.32Ga _0.68As Heterostructures

Wanli Li, D. R. Luhman, D. C. Tsui, L. N. Pfeiffer, K. W. West

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16 Scopus citations

Abstract

We report the observation of a reentrant quantum Hall effect in the lowest Landau level between filling factors of 2/3 and 3/5 in a Al_xGa _1-xAs/Al_0.32Ga_0.68As heterostructure sample with x=0.85%. A reentrant insulating phase is also observed between filling factors of 2/5 and 1/3, demonstrating particle-hole symmetry between these phases. A sample with x=0.21% shows much weaker reentrant features, indicating that increased short-range scattering, due to the Al alloy in the conduction channel, aids in the formation of these phases.

Original language	English (US)
Article number	076803
Journal	Physical review letters
Volume	105
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.105.076803
State	Published - Aug 11 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.105.076803

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title = "Observation of reentrant phases induced by short-range disorder in the lowest Landau level of AlxGa1-xAs/Al0.32Ga 0.68As Heterostructures",

abstract = "We report the observation of a reentrant quantum Hall effect in the lowest Landau level between filling factors of 2/3 and 3/5 in a AlxGa 1-xAs/Al0.32Ga0.68As heterostructure sample with x=0.85%. A reentrant insulating phase is also observed between filling factors of 2/5 and 1/3, demonstrating particle-hole symmetry between these phases. A sample with x=0.21% shows much weaker reentrant features, indicating that increased short-range scattering, due to the Al alloy in the conduction channel, aids in the formation of these phases.",

author = "Wanli Li and Luhman, {D. R.} and Tsui, {D. C.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "2010",

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doi = "10.1103/PhysRevLett.105.076803",

language = "English (US)",

volume = "105",

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T1 - Observation of reentrant phases induced by short-range disorder in the lowest Landau level of AlxGa1-xAs/Al0.32Ga 0.68As Heterostructures

AU - Li, Wanli

AU - Luhman, D. R.

AU - Tsui, D. C.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2010/8/11

Y1 - 2010/8/11

N2 - We report the observation of a reentrant quantum Hall effect in the lowest Landau level between filling factors of 2/3 and 3/5 in a AlxGa 1-xAs/Al0.32Ga0.68As heterostructure sample with x=0.85%. A reentrant insulating phase is also observed between filling factors of 2/5 and 1/3, demonstrating particle-hole symmetry between these phases. A sample with x=0.21% shows much weaker reentrant features, indicating that increased short-range scattering, due to the Al alloy in the conduction channel, aids in the formation of these phases.

AB - We report the observation of a reentrant quantum Hall effect in the lowest Landau level between filling factors of 2/3 and 3/5 in a AlxGa 1-xAs/Al0.32Ga0.68As heterostructure sample with x=0.85%. A reentrant insulating phase is also observed between filling factors of 2/5 and 1/3, demonstrating particle-hole symmetry between these phases. A sample with x=0.21% shows much weaker reentrant features, indicating that increased short-range scattering, due to the Al alloy in the conduction channel, aids in the formation of these phases.

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Observation of reentrant phases induced by short-range disorder in the lowest Landau level of Al_xGa_1-xAs/Al_0.32Ga _0.68As Heterostructures

Abstract

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