Observation of quantum fluctuations of charge on a quantum dot

D. Berman, N. B. Zhitenev, R. C. Ashoori, M. Shayegan

Research output: Contribution to journalArticle

89 Scopus citations

Abstract

We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the dot charge. Voltage biasing a gate draws charge from a reservoir into the dot through a single point contact. The dot charge increases continuously for large point contact conductance and in single electron steps with the contact nearly closed, and we measure the corresponding capacitance line shapes. The line shapes are not typical of lifetime or thermal broadening but fit well to predictions of perturbation theory.

Original languageEnglish (US)
Pages (from-to)161-164
Number of pages4
JournalPhysical review letters
Volume82
Issue number1
DOIs
StatePublished - Jan 1 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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