Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K

Effendi Leobandung, Lingjie Guo, Yun Wang, Stephen Y. Chou

Research output: Contribution to journalArticle

228 Scopus citations

Abstract

We report the fabrication and characterization of lithographically defined nanoscale silicon quantum-dot transistors that operate at temperatures over 100 K and a bias higher than 0.07 V. In the tunneling regime, these transistors show strong current oscillations due to quantum confinement and single-electron charging effects. In the propagating regime, a different kind of current modulation has been observed, which is attributed to the interference between different modes of quantum waves in a cavity. Proper scaling of these transistors should lead to operation at room temperature and a bias of 0.3 V.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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