We report the fabrication and characterization of lithographically defined nanoscale silicon quantum-dot transistors that operate at temperatures over 100 K and a bias higher than 0.07 V. In the tunneling regime, these transistors show strong current oscillations due to quantum confinement and single-electron charging effects. In the propagating regime, a different kind of current modulation has been observed, which is attributed to the interference between different modes of quantum waves in a cavity. Proper scaling of these transistors should lead to operation at room temperature and a bias of 0.3 V.
|Original language||English (US)|
|Number of pages||1|
|Journal||Applied Physics Letters|
|State||Published - 1995|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)