Observation of quantized Hall drag in a strongly correlated bilayer electron system

M. Kellogg, I. B. Spielman, J. P. Eisenstein, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

185 Scopus citations

Abstract

The quantized Hall drag in a strongly correlated bilayer electron system was analyzed. Molecular beam epitaxy (MBE) was used to grow the GaAs/AlGaAs heterostructures. The metal gate electrodes deposited on the sample top surface and back side were used to independently vary the density of states (DOS). Analysis suggested that the frictional drag, whose signature is a voltage build up in one layer in response to current in another layer depends directly on the interlayer correlations in the system.

Original languageEnglish (US)
Article number126804
Pages (from-to)1268041-1268044
Number of pages4
JournalPhysical review letters
Volume88
Issue number12
StatePublished - Mar 25 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Observation of quantized Hall drag in a strongly correlated bilayer electron system'. Together they form a unique fingerprint.

Cite this