Abstract
The quantized Hall drag in a strongly correlated bilayer electron system was analyzed. Molecular beam epitaxy (MBE) was used to grow the GaAs/AlGaAs heterostructures. The metal gate electrodes deposited on the sample top surface and back side were used to independently vary the density of states (DOS). Analysis suggested that the frictional drag, whose signature is a voltage build up in one layer in response to current in another layer depends directly on the interlayer correlations in the system.
Original language | English (US) |
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Article number | 126804 |
Pages (from-to) | 1268041-1268044 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 88 |
Issue number | 12 |
State | Published - Mar 25 2002 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy