Observation of long lifetime lines in photoluminescence from Si: In

G. S. Mitchard, S. A. Lyon, K. R. Elliott, T. C. McGill

Research output: Contribution to journalArticle

55 Scopus citations

Abstract

We report the first observation of lines with lifetimes of about 200 μs in silicon samples doped with indium. These long lifetimes are comparable to the radiative lifetime for the indium bound exciton and suggest that these lines are due to isoelectronic centers in silicon.

Original languageEnglish (US)
Pages (from-to)425-429
Number of pages5
JournalSolid State Communications
Volume29
Issue number5
DOIs
StatePublished - Feb 1979
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Observation of long lifetime lines in photoluminescence from Si: In'. Together they form a unique fingerprint.

  • Cite this