Observation of long lifetime lines in photoluminescence from Si: In

G. S. Mitchard; S. A. Lyon; K. R. Elliott; T. C. McGill

doi:10.1016/0038-1098(79)91209-2

Observation of long lifetime lines in photoluminescence from Si: In

G. S. Mitchard, S. A. Lyon, K. R. Elliott, T. C. McGill

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the first observation of lines with lifetimes of about 200 μs in silicon samples doped with indium. These long lifetimes are comparable to the radiative lifetime for the indium bound exciton and suggest that these lines are due to isoelectronic centers in silicon.

Original language	English (US)
Pages (from-to)	425-429
Number of pages	5
Journal	Solid State Communications
Volume	29
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(79)91209-2
State	Published - Feb 1979
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(79)91209-2

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title = "Observation of long lifetime lines in photoluminescence from Si: In",

abstract = "We report the first observation of lines with lifetimes of about 200 μs in silicon samples doped with indium. These long lifetimes are comparable to the radiative lifetime for the indium bound exciton and suggest that these lines are due to isoelectronic centers in silicon.",

author = "Mitchard, {G. S.} and Lyon, {S. A.} and Elliott, {K. R.} and McGill, {T. C.}",

note = "Funding Information: National Research Council of Canada Postgraduate Scholar Research supported in part by the Advanced Research Projects Agency under Contract No. ~AA~70--77--C--OO~2 Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1979",

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language = "English (US)",

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AU - Mitchard, G. S.

AU - Lyon, S. A.

AU - Elliott, K. R.

AU - McGill, T. C.

N1 - Funding Information: National Research Council of Canada Postgraduate Scholar Research supported in part by the Advanced Research Projects Agency under Contract No. ~AA~70--77--C--OO~2 Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1979/2

Y1 - 1979/2

N2 - We report the first observation of lines with lifetimes of about 200 μs in silicon samples doped with indium. These long lifetimes are comparable to the radiative lifetime for the indium bound exciton and suggest that these lines are due to isoelectronic centers in silicon.

AB - We report the first observation of lines with lifetimes of about 200 μs in silicon samples doped with indium. These long lifetimes are comparable to the radiative lifetime for the indium bound exciton and suggest that these lines are due to isoelectronic centers in silicon.

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Observation of long lifetime lines in photoluminescence from Si: In

Abstract

All Science Journal Classification (ASJC) codes

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