Observation of impurity cyclotron resonance in Hg1-xCdxTe

V. J. Goldman, H. D. Drew, Mansour Shayegan, D. A. Nelson

Research output: Contribution to journalArticle

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Abstract

Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.

Original languageEnglish (US)
Pages (from-to)968-971
Number of pages4
JournalPhysical Review Letters
Volume56
Issue number9
DOIs
StatePublished - Jan 1 1986

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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