Observation of impurity cyclotron resonance in Hg1-xCdxTe

V. J. Goldman; H. D. Drew; Mansour Shayegan; D. A. Nelson

doi:10.1103/PhysRevLett.56.968

Observation of impurity cyclotron resonance in Hg1-xCdxTe

V. J. Goldman, H. D. Drew, Mansour Shayegan, D. A. Nelson

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Abstract

Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.

Original language	English (US)
Pages (from-to)	968-971
Number of pages	4
Journal	Physical Review Letters
Volume	56
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.56.968
State	Published - Jan 1 1986

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1103/PhysRevLett.56.968

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title = "Observation of impurity cyclotron resonance in Hg1-xCdxTe",

abstract = "Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.",

author = "Goldman, {V. J.} and Drew, {H. D.} and Mansour Shayegan and Nelson, {D. A.}",

year = "1986",

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T1 - Observation of impurity cyclotron resonance in Hg1-xCdxTe

AU - Goldman, V. J.

AU - Drew, H. D.

AU - Shayegan, Mansour

AU - Nelson, D. A.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.

AB - Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.

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JO - Physical Review Letters

JF - Physical Review Letters

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ER -

Observation of impurity cyclotron resonance in Hg1-xCdxTe

Abstract

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