Observation of impurity cyclotron resonance in Hg1-xCdxTe

V. J. Goldman; H. D. Drew; M. Shayegan; D. A. Nelson

doi:10.1103/PhysRevLett.56.968

Observation of impurity cyclotron resonance in Hg1-xCdxTe

V. J. Goldman, H. D. Drew, M. Shayegan, D. A. Nelson

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Abstract

Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.

Original language	English (US)
Pages (from-to)	968-971
Number of pages	4
Journal	Physical review letters
Volume	56
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.56.968
State	Published - 1986

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.56.968

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@article{967d34157da5456b9a9e63b78fb28aa3,

title = "Observation of impurity cyclotron resonance in Hg1-xCdxTe",

abstract = "Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.",

author = "Goldman, {V. J.} and Drew, {H. D.} and M. Shayegan and Nelson, {D. A.}",

year = "1986",

doi = "10.1103/PhysRevLett.56.968",

language = "English (US)",

volume = "56",

pages = "968--971",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "9",

}

TY - JOUR

T1 - Observation of impurity cyclotron resonance in Hg1-xCdxTe

AU - Goldman, V. J.

AU - Drew, H. D.

AU - Shayegan, M.

AU - Nelson, D. A.

PY - 1986

Y1 - 1986

N2 - Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.

AB - Impurity cyclotron resonance (ICR) has been observed in n-Hg1-xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of 10-6 sec in the lowest Landau level.

UR - http://www.scopus.com/inward/record.url?scp=33748953353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748953353&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.56.968

DO - 10.1103/PhysRevLett.56.968

M3 - Article

C2 - 10033333

AN - SCOPUS:33748953353

SN - 0031-9007

VL - 56

SP - 968

EP - 971

JO - Physical review letters

JF - Physical review letters

IS - 9

ER -

Observation of impurity cyclotron resonance in Hg1-xCdxTe

Abstract

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