Observation of hot-electron energy loss through the emission of phonon-plasmon coupled modes in GaAs

C. L. Petersen, S. A. Lyon

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Abstract

We have directly observed hot-electron energy loss through the emission of phonon-plasmon coupled modes in n-type Si-doped GaAs. The self-compensation of silicon in GaAs was exploited to allow observation of hot-electron recombination with neutral Si acceptors in a high background concentration of free electrons. We have obtained hot-luminescence data which exhibit a peak due to the initial unrelaxed hot electrons followed by a peak lower in energy by the L+ coupled-mode energy. The lower-energy peak corresponds to hot-electron relaxation via emission of a phonon-plasmon coupled mode. The observed peak agrees well with energy-loss calculations.

Original languageEnglish (US)
Pages (from-to)760-763
Number of pages4
JournalPhysical review letters
Volume65
Issue number6
DOIs
StatePublished - Jan 1 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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