Observation of fractional quantum Hall effect in an InAs quantum well

Meng K. Ma, Md Shafayat Hossain, K. A. Villegas Rosales, H. Deng, T. Tschirky, W. Wegscheider, M. Shayegan

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7 Scopus citations

Abstract

The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasiparticles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here, we report the observation of the fractional quantum Hall effect in a very low disorder InAs quantum well with a well width of 24 nm, containing a two-dimensional electron system with a density n=7.8×1011cm-2 and low-temperature mobility 1.8×106cm2/Vs. At a temperature of ≃35 mK and B≃24 T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at a Landau level filling factor ν=4/3.

Original languageEnglish (US)
Article number241301
JournalPhysical Review B
Volume96
Issue number24
DOIs
StatePublished - Dec 4 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Ma, M. K., Hossain, M. S., Villegas Rosales, K. A., Deng, H., Tschirky, T., Wegscheider, W., & Shayegan, M. (2017). Observation of fractional quantum Hall effect in an InAs quantum well. Physical Review B, 96(24), [241301]. https://doi.org/10.1103/PhysRevB.96.241301