Observation of fractional quantum Hall effect in an InAs quantum well

Meng K. Ma, Md Shafayat Hossain, K. A. Villegas Rosales, H. Deng, T. Tschirky, W. Wegscheider, M. Shayegan

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasiparticles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here, we report the observation of the fractional quantum Hall effect in a very low disorder InAs quantum well with a well width of 24 nm, containing a two-dimensional electron system with a density n=7.8×1011cm-2 and low-temperature mobility 1.8×106cm2/Vs. At a temperature of ≃35 mK and B≃24 T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at a Landau level filling factor ν=4/3.

Original languageEnglish (US)
Article number241301
JournalPhysical Review B
Issue number24
StatePublished - Dec 4 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Observation of fractional quantum Hall effect in an InAs quantum well'. Together they form a unique fingerprint.

Cite this