Observation of Flat Bands in Gated Semiconductor Artificial Graphene

Lingjie Du, Ziyu Liu, Shalom J. Wind, Vittorio Pellegrini, Ken W. West, Saeed Fallahi, Loren N. Pfeiffer, Michael J. Manfra, Aron Pinczuk

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Flat bands near M points in the Brillouin zone are key features of honeycomb symmetry in artificial graphene (AG) where electrons may condense into novel correlated phases. Here we report the observation of van Hove singularity doublet of AG in GaAs quantum well transistors, which presents the evidence of flat bands in semiconductor AG. Two emerging peaks in photoluminescence spectra tuned by backgate voltages probe the singularity doublet of AG flat bands and demonstrate their accessibility to the Fermi level. As the Fermi level crosses the doublet, the spectra display dramatic stability against electron density, indicating interplays between electron-electron interactions and honeycomb symmetry. Our results provide a new flexible platform to explore intriguing flat band physics.

Original languageEnglish (US)
Article number106402
JournalPhysical review letters
Volume126
Issue number10
DOIs
StatePublished - Mar 12 2021
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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