Observation of Electron Velocity Overshoot in Sub-100-nm-channel MOSFET's in Silicon

S. Y. Chou, Dimitri A. Antoniadis, Henry I. Smith

Research output: Contribution to journalArticle

78 Scopus citations

Abstract

n-channel MOSFET's with channel lengths from 75 nm to 5 μm were fabricated in Si using combined X-ray and optical lithogra-phies, and were characterized at 300, 77, and 4.2 K. Average channel electron velocities ve were extracted according to the equation ve =gml /C0X where gmi is the intrinsic transconductance and Cox is the capacitance of the gate oxide. We found that at 4.2 K the average electron velocity of a 75-nm-channel MOSFET is 1.7 x 107 cm/s, which is 1.8 times higher than the inversion layer saturation velocity reported in the literature, and 1.3 times higher than the saturation velocity in bulk Si at 4.2 K. As channel length increases, the average electron velocity drops sharply below the saturation velocity in bulk Si. These experimental results strongly suggest velocity overshoot in a 75-nm-channel MOSFET.

Original languageEnglish (US)
Pages (from-to)665-667
Number of pages3
JournalIEEE Electron Device Letters
Volume6
Issue number12
DOIs
StatePublished - Dec 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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