Observation of electron resonant tunneling in a lateral dual-gate resonant tunneling field-effect transistor

S. Y. Chou, D. R. Allee, R. F.W. Pease, J. S. Harris

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

A new lateral resonant tunneling field-effect transistor (LARTFET) has been fabricated using molecular beam epitaxy and ultrahigh-resolution electron beam lithography. The LARTFET has two 80-nm-long gate electrodes separated by 100 nm. The dual gates create double potential barriers in the channel and a quantum well in between. Conductance oscillations are observed, which, for the first time, indicate electron resonant tunneling through the energy states in a lateral double-barrier quantum well formed electrostatically. Furthermore, after illumination, two additional negative transconductance peaks are observed. These additional peaks may be related to electron resonant tunneling through the donor-related deep levels in silicon-doped Al0.35Ga 0.65As.

Original languageEnglish (US)
Pages (from-to)176-178
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number2
DOIs
StatePublished - Dec 1 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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