A new lateral resonant tunneling field-effect transistor (LARTFET) has been fabricated using molecular beam epitaxy and ultrahigh-resolution electron beam lithography. The LARTFET has two 80-nm-long gate electrodes separated by 100 nm. The dual gates create double potential barriers in the channel and a quantum well in between. Conductance oscillations are observed, which, for the first time, indicate electron resonant tunneling through the energy states in a lateral double-barrier quantum well formed electrostatically. Furthermore, after illumination, two additional negative transconductance peaks are observed. These additional peaks may be related to electron resonant tunneling through the donor-related deep levels in silicon-doped Al0.35Ga 0.65As.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1989|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)