A ‘quantum donut’ device with quantum point contacts and an independently tunable center gate was fabricated in a GaAs/Al0.3Ga0.7As heterostructure. The low temperature magnetoconductance in the tunneling regime shows two sets of oscillations at high magnetic fields: one corresponds to the area enclosed by the outer diameter, associated with Aharonov-Bohm-like edge state interference, and one corresponds to the area of the annulus, associated with oscillations in the self-consistent electron distribution due to Landau level depopulations.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering