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Observation of an environmentally insensitive solid-state spin defect in diamond

  • Brendon C. Rose
  • , Ding Huang
  • , Zi Huai Zhang
  • , Paul Stevenson
  • , Alexei M. Tyryshkin
  • , Sorawis Sangtawesin
  • , Srikanth Srinivasan
  • , Lorne Loudin
  • , Matthew L. Markham
  • , Andrew M. Edmonds
  • , Daniel J. Twitchen
  • , Stephen A. Lyon
  • , Nathalie P. De Leon

Research output: Contribution to journalArticlepeer-review

Abstract

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0. SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near–transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.

Original languageEnglish (US)
Pages (from-to)60-63
Number of pages4
JournalScience
Volume361
Issue number6397
DOIs
StatePublished - Jul 6 2018

All Science Journal Classification (ASJC) codes

  • General

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