Observation of an environmentally insensitive solid-state spin defect in diamond

Brendon C. Rose, Ding Huang, Zi Huai Zhang, Paul Stevenson, Alexei M. Tyryshkin, Sorawis Sangtawesin, Srikanth Srinivasan, Lorne Loudin, Matthew L. Markham, Andrew M. Edmonds, Daniel J. Twitchen, Stephen A. Lyon, Nathalie P. De Leon

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Abstract

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0. SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near–transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.

Original languageEnglish (US)
Pages (from-to)60-63
Number of pages4
JournalScience
Volume361
Issue number6397
DOIs
StatePublished - Jul 6 2018

All Science Journal Classification (ASJC) codes

  • General

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    Rose, B. C., Huang, D., Zhang, Z. H., Stevenson, P., Tyryshkin, A. M., Sangtawesin, S., Srinivasan, S., Loudin, L., Markham, M. L., Edmonds, A. M., Twitchen, D. J., Lyon, S. A., & De Leon, N. P. (2018). Observation of an environmentally insensitive solid-state spin defect in diamond. Science, 361(6397), 60-63. https://doi.org/10.1126/science.aao0290