TY - JOUR
T1 - Observation of an environmentally insensitive solid-state spin defect in diamond
AU - Rose, Brendon C.
AU - Huang, Ding
AU - Zhang, Zi Huai
AU - Stevenson, Paul
AU - Tyryshkin, Alexei M.
AU - Sangtawesin, Sorawis
AU - Srinivasan, Srikanth
AU - Loudin, Lorne
AU - Markham, Matthew L.
AU - Edmonds, Andrew M.
AU - Twitchen, Daniel J.
AU - Lyon, Stephen A.
AU - De Leon, Nathalie P.
N1 - Publisher Copyright:
© The Authors.
PY - 2018/7/6
Y1 - 2018/7/6
N2 - Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0. SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near–transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.
AB - Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0. SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near–transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.
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U2 - 10.1126/science.aao0290
DO - 10.1126/science.aao0290
M3 - Article
C2 - 29976820
AN - SCOPUS:85049647621
SN - 0036-8075
VL - 361
SP - 60
EP - 63
JO - Science
JF - Science
IS - 6397
ER -