Observation of an abrupt double-to-single-layer transition in a double-quantum-well structure

Y. Katayama, D. C. Tsui, H. C. Manoharan, M. Shayegan

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

We report the first observation of an abrupt double-to-single-layer transition in a GaAs/AlAs double-quantum-well (DQW) structure. The transition is observed as a sharp decrease in the 4-terminal resistance measured as a function of the bias applied to the front gate of the device. Data on the Shubnikov-de Haas oscillations taken at different gate voltages reveal that this abrupt change in resistance is associated with the transition from a double- to a single-layer two-dimensional electron system in the DQW.

Original languageEnglish (US)
Pages (from-to)405-407
Number of pages3
JournalSurface Science
Volume305
Issue number1-3
DOIs
StatePublished - Mar 20 1994

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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