Abstract
We report the first observation of an abrupt double-to-single-layer transition in a GaAs/AlAs double-quantum-well (DQW) structure. The transition is observed as a sharp decrease in the 4-terminal resistance measured as a function of the bias applied to the front gate of the device. Data on the Shubnikov-de Haas oscillations taken at different gate voltages reveal that this abrupt change in resistance is associated with the transition from a double- to a single-layer two-dimensional electron system in the DQW.
Original language | English (US) |
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Pages (from-to) | 405-407 |
Number of pages | 3 |
Journal | Surface Science |
Volume | 305 |
Issue number | 1-3 |
DOIs | |
State | Published - Mar 20 1994 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry