Observation of an abrupt double-to-single-layer transition in a double-quantum-well structure

Y. Katayama; D. C. Tsui; H. C. Manoharan; M. Shayegan

doi:10.1016/0039-6028(94)90926-1

Observation of an abrupt double-to-single-layer transition in a double-quantum-well structure

Y. Katayama, D. C. Tsui, H. C. Manoharan, M. Shayegan

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Abstract

We report the first observation of an abrupt double-to-single-layer transition in a GaAs/AlAs double-quantum-well (DQW) structure. The transition is observed as a sharp decrease in the 4-terminal resistance measured as a function of the bias applied to the front gate of the device. Data on the Shubnikov-de Haas oscillations taken at different gate voltages reveal that this abrupt change in resistance is associated with the transition from a double- to a single-layer two-dimensional electron system in the DQW.

Original language	English (US)
Pages (from-to)	405-407
Number of pages	3
Journal	Surface Science
Volume	305
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(94)90926-1
State	Published - Mar 20 1994

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)90926-1

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title = "Observation of an abrupt double-to-single-layer transition in a double-quantum-well structure",

abstract = "We report the first observation of an abrupt double-to-single-layer transition in a GaAs/AlAs double-quantum-well (DQW) structure. The transition is observed as a sharp decrease in the 4-terminal resistance measured as a function of the bias applied to the front gate of the device. Data on the Shubnikov-de Haas oscillations taken at different gate voltages reveal that this abrupt change in resistance is associated with the transition from a double- to a single-layer two-dimensional electron system in the DQW.",

author = "Y. Katayama and Tsui, {D. C.} and Manoharan, {H. C.} and M. Shayegan",

note = "Funding Information: Y.K. acknowledgesth e financial support from the IBM Japan overseass cholarshipp rograma nd H.C.M. acknowledgetsh e fellowships upportf rom the Fannie and John Hertz Foundation. This work is supportedi n part by the NSF.",

year = "1994",

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doi = "10.1016/0039-6028(94)90926-1",

language = "English (US)",

volume = "305",

pages = "405--407",

journal = "Surface Science",

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TY - JOUR

T1 - Observation of an abrupt double-to-single-layer transition in a double-quantum-well structure

AU - Katayama, Y.

AU - Tsui, D. C.

AU - Manoharan, H. C.

AU - Shayegan, M.

N1 - Funding Information: Y.K. acknowledgesth e financial support from the IBM Japan overseass cholarshipp rograma nd H.C.M. acknowledgetsh e fellowships upportf rom the Fannie and John Hertz Foundation. This work is supportedi n part by the NSF.

PY - 1994/3/20

Y1 - 1994/3/20

N2 - We report the first observation of an abrupt double-to-single-layer transition in a GaAs/AlAs double-quantum-well (DQW) structure. The transition is observed as a sharp decrease in the 4-terminal resistance measured as a function of the bias applied to the front gate of the device. Data on the Shubnikov-de Haas oscillations taken at different gate voltages reveal that this abrupt change in resistance is associated with the transition from a double- to a single-layer two-dimensional electron system in the DQW.

AB - We report the first observation of an abrupt double-to-single-layer transition in a GaAs/AlAs double-quantum-well (DQW) structure. The transition is observed as a sharp decrease in the 4-terminal resistance measured as a function of the bias applied to the front gate of the device. Data on the Shubnikov-de Haas oscillations taken at different gate voltages reveal that this abrupt change in resistance is associated with the transition from a double- to a single-layer two-dimensional electron system in the DQW.

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U2 - 10.1016/0039-6028(94)90926-1

DO - 10.1016/0039-6028(94)90926-1

M3 - Article

AN - SCOPUS:0028393031

SN - 0039-6028

VL - 305

SP - 405

EP - 407

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Observation of an abrupt double-to-single-layer transition in a double-quantum-well structure

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