We report the first observation of an abrupt double-to-single-layer transition in a GaAs/AlAs double-quantum-well (DQW) structure. The transition is observed as a sharp decrease in the 4-terminal resistance measured as a function of the bias applied to the front gate of the device. Data on the Shubnikov-de Haas oscillations taken at different gate voltages reveal that this abrupt change in resistance is associated with the transition from a double- to a single-layer two-dimensional electron system in the DQW.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry