Observation of a spin bottleneck for tunneling into the ν = 1 quantum Hall state

H. B. Chan; R. C. Ashoori; L. N. Pfeiffer; K. W. West

doi:10.1016/S1386-9477(99)00182-4

Observation of a spin bottleneck for tunneling into the ν = 1 quantum Hall state

H. B. Chan, R. C. Ashoori, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Conference article › peer-review

Abstract

We measure equilibrium tunneling of electrons from a 3D electrode into a high-mobility 2D electron system. For most 2D Landau level-filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (v = 1,3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.

Original language	English (US)
Pages (from-to)	722-726
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	6
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(99)00182-4
State	Published - Feb 2000
Externally published	Yes
Event	13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can Duration: Aug 1 1999 → Aug 6 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/S1386-9477(99)00182-4

Cite this

@article{cbe6a22b8093413dab23e1fb3cfa48de,

title = "Observation of a spin bottleneck for tunneling into the ν = 1 quantum Hall state",

abstract = "We measure equilibrium tunneling of electrons from a 3D electrode into a high-mobility 2D electron system. For most 2D Landau level-filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (v = 1,3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.",

author = "Chan, {H. B.} and Ashoori, {R. C.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "2000",

month = feb,

doi = "10.1016/S1386-9477(99)00182-4",

language = "English (US)",

volume = "6",

pages = "722--726",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1",

note = "13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) ; Conference date: 01-08-1999 Through 06-08-1999",

}

TY - JOUR

T1 - Observation of a spin bottleneck for tunneling into the ν = 1 quantum Hall state

AU - Chan, H. B.

AU - Ashoori, R. C.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2000/2

Y1 - 2000/2

N2 - We measure equilibrium tunneling of electrons from a 3D electrode into a high-mobility 2D electron system. For most 2D Landau level-filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (v = 1,3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.

AB - We measure equilibrium tunneling of electrons from a 3D electrode into a high-mobility 2D electron system. For most 2D Landau level-filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (v = 1,3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.

UR - http://www.scopus.com/inward/record.url?scp=0034138820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034138820&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(99)00182-4

DO - 10.1016/S1386-9477(99)00182-4

M3 - Conference article

AN - SCOPUS:0034138820

SN - 1386-9477

VL - 6

SP - 722

EP - 726

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)

Y2 - 1 August 1999 through 6 August 1999

ER -

Observation of a spin bottleneck for tunneling into the ν = 1 quantum Hall state

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this