Abstract
Measurements of the work function of a Si(111) surface held at T20 K during exposure to O2 provide direct evidence for a precursor state preceding dissociative chemisorption. A striking feature of the precursor is its large surface dipole, resulting in a large positive work-function shift ( 1.6 eV). The precursor is effectively stable for T120 K, and converts to a final state upon heating the surface. Analysis of the dependence of on temperature and time indicates an activation energy of 40 meV for this conversion.
Original language | English (US) |
---|---|
Pages (from-to) | 10432-10435 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 37 |
Issue number | 17 |
DOIs | |
State | Published - 1988 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics