Observation of a donor exciton band in silicon

M. Capizzi, G. A. Thomas, F. DeRosa, R. N. Bhatt, T. M. Rice

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

Far-infrared transmission measurements on P-doped Si at donor concentrations below the metal-insulator transition show absorption bands from donor pairs. We identify the lowest energy band as charge transfer excitations from a donor to its neigbhor, forming excitons (D+D-) in the Mott-Hubbard gap. The results suggest that charge transfer states in complexes dominate the low-energy optical excitations as the insulator approaches the Mott density.

Original languageEnglish (US)
Pages (from-to)611-616
Number of pages6
JournalSolid State Communications
Volume31
Issue number9
DOIs
StatePublished - Sep 1979
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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