Observation of a =1/2 fractional quantum Hall state in a double-layer electron system

Y. W. Suen, L. W. Engel, M. B. Santos, M. Shayegan, D. C. Tsui

Research output: Contribution to journalArticlepeer-review

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Abstract

We report the observation, for the first time, of a fractional quantum Hall state at =1/2 Landau-level filling in a low disorder, double-layer electron system realized in a 680 - wide GaAs/AlGaAs single quantum well. A nearly vanishing diagonal resistance and a Hall resistance quantized at 2h/e2 to within 0.3% are observed at 15 T and 26 mK. The activated temperature dependence of the diagonal resistance minimum yields a quasiparticle excitation energy gap of 230 mK.

Original languageEnglish (US)
Pages (from-to)1379-1382
Number of pages4
JournalPhysical review letters
Volume68
Issue number9
DOIs
StatePublished - 1992

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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