Abstract
In previous work it has been shown that the decay in photoluminescence from Si/strained-Si1-xGex/Si quantum wells at temperatures over 100 K is controlled by surface recombination and that the photoluminescence intensity can be increased by over an order of magnitude by surface passivation. These results had been explained only by a simple phenomenological model, which could not explain why at high pump power density the observed luminescence was constant from 77 to 250 K. This paper uses a two-carrier heterojunction device simulator to determine the carrier profiles during optical pumping. The profiles are used to understand quantitatively luminescence as a function of temperature and pump power density without making the over-simplifying assumptions required for analytical modeling. Surface recombination velocities over 103 cm/s drastically affect the results, and Auger recombination plays an important role at high pump power density.
Original language | English (US) |
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Pages (from-to) | 350-355 |
Number of pages | 6 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 6 |
Issue number | 5 |
DOIs | |
State | Published - Oct 1 1995 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering