Numerical simulation of the temperature dependence of photoluminescence in strained-Si1-xGex/Si heterostructures

A. St Amour, J. C. Sturm

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In previous work it has been shown that the decay in photoluminescence from Si/strained-Si1-xGex/Si quantum wells at temperatures over 100 K is controlled by surface recombination and that the photoluminescence intensity can be increased by over an order of magnitude by surface passivation. These results had been explained only by a simple phenomenological model, which could not explain why at high pump power density the observed luminescence was constant from 77 to 250 K. This paper uses a two-carrier heterojunction device simulator to determine the carrier profiles during optical pumping. The profiles are used to understand quantitatively luminescence as a function of temperature and pump power density without making the over-simplifying assumptions required for analytical modeling. Surface recombination velocities over 103 cm/s drastically affect the results, and Auger recombination plays an important role at high pump power density.

Original languageEnglish (US)
Pages (from-to)350-355
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume6
Issue number5
DOIs
StatePublished - Oct 1 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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