Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained-Si1-xGex/Si heterostructures

A. St. Amour; J. C. Sturm

Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained-Si_1-xGe_x/Si heterostructures

Research output: Contribution to journal › Conference article › peer-review

Abstract

The temperature dependence of band-edge photoluminescence (PL) and electroluminescence (EL) of Si_1-xGe_x/Si heterostructures was simulated using a two-carrier device simulator. The device simulator was used to determine electrically and optically excited carrier profiles, from which light emission was computed. The simulations confirmed an earlier result that PL intensity at high temperature (> 150K) is controlled by surface recombination. Furthermore, it was found that the difference in measured temperature dependence between PL and EL experiments is due to (i) the EL experiments being performed at a much higher total injection rate and (ii) the heavily doped, buried contact layers in EL structures (p-i-n diodes) effectively blocking carriers from diffusing into the substrate and away from the Si_1-xGe_x layer.

Original language	English (US)
Pages (from-to)	769-772
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1995
Event	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

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title = "Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained-Si1-xGex/Si heterostructures",

abstract = "The temperature dependence of band-edge photoluminescence (PL) and electroluminescence (EL) of Si1-xGex/Si heterostructures was simulated using a two-carrier device simulator. The device simulator was used to determine electrically and optically excited carrier profiles, from which light emission was computed. The simulations confirmed an earlier result that PL intensity at high temperature (> 150K) is controlled by surface recombination. Furthermore, it was found that the difference in measured temperature dependence between PL and EL experiments is due to (i) the EL experiments being performed at a much higher total injection rate and (ii) the heavily doped, buried contact layers in EL structures (p-i-n diodes) effectively blocking carriers from diffusing into the substrate and away from the Si1-xGex layer.",

author = "{St. Amour}, A. and Sturm, {J. C.}",

year = "1995",

language = "English (US)",

pages = "769--772",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 ; Conference date: 10-12-1995 Through 13-12-1995",

}

TY - JOUR

T1 - Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained-Si1-xGex/Si heterostructures

AU - St. Amour, A.

AU - Sturm, J. C.

PY - 1995

Y1 - 1995

N2 - The temperature dependence of band-edge photoluminescence (PL) and electroluminescence (EL) of Si1-xGex/Si heterostructures was simulated using a two-carrier device simulator. The device simulator was used to determine electrically and optically excited carrier profiles, from which light emission was computed. The simulations confirmed an earlier result that PL intensity at high temperature (> 150K) is controlled by surface recombination. Furthermore, it was found that the difference in measured temperature dependence between PL and EL experiments is due to (i) the EL experiments being performed at a much higher total injection rate and (ii) the heavily doped, buried contact layers in EL structures (p-i-n diodes) effectively blocking carriers from diffusing into the substrate and away from the Si1-xGex layer.

AB - The temperature dependence of band-edge photoluminescence (PL) and electroluminescence (EL) of Si1-xGex/Si heterostructures was simulated using a two-carrier device simulator. The device simulator was used to determine electrically and optically excited carrier profiles, from which light emission was computed. The simulations confirmed an earlier result that PL intensity at high temperature (> 150K) is controlled by surface recombination. Furthermore, it was found that the difference in measured temperature dependence between PL and EL experiments is due to (i) the EL experiments being performed at a much higher total injection rate and (ii) the heavily doped, buried contact layers in EL structures (p-i-n diodes) effectively blocking carriers from diffusing into the substrate and away from the Si1-xGex layer.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029547948&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029547948

SN - 0163-1918

SP - 769

EP - 772

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1995 International Electron Devices Meeting, IEDM'95

Y2 - 10 December 1995 through 13 December 1995

ER -

Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained-Si_1-xGe_x/Si heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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