Novel surface gate structure to induce sharp potential barriers in two-dimensional electron systems

J. P. Lu, X. Ying, M. Shayegan

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A novel surface gate structure, consisting of a central gate and two side gates, is proposed to generate an effectively sharp potential barrier for two-dimensional electrons confined to a semiconductor heterojunction deep below the sample surface. The side gates are biased at a higher potential than the central gate to enhance the large-wave-vector Fourier components of the potential and therefore to compensate partially for the strong decay, due to fringing fields, of these components as a function of the distance below the surface. The reflection coefficient calculated for the proposed potential barrier exhibits strong oscillations as a function of barrier height, much stronger than a conventional single gate. The results suggest that the proposed gate structure should find use in realization of an electron interferometer which can serve as a building block for novel electron interference devices.

Original languageEnglish (US)
Pages (from-to)2320-2322
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number18
DOIs
StatePublished - Dec 1 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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