Abstract
A novel surface gate structure, consisting of a central gate and two side gates, is proposed to generate an effectively sharp potential barrier for two-dimensional electrons confined to a semiconductor heterojunction deep below the sample surface. The side gates are biased at a higher potential than the central gate to enhance the large-wave-vector Fourier components of the potential and therefore to compensate partially for the strong decay, due to fringing fields, of these components as a function of the distance below the surface. The reflection coefficient calculated for the proposed potential barrier exhibits strong oscillations as a function of barrier height, much stronger than a conventional single gate. The results suggest that the proposed gate structure should find use in realization of an electron interferometer which can serve as a building block for novel electron interference devices.
Original language | English (US) |
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Pages (from-to) | 2320-2322 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 18 |
DOIs | |
State | Published - 1994 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)