Novel optical properties of semiconductor quantum wires

J. S. Weiner; G. Danan; A. Pinczuk; J. Valladares; L. N. Pfeiffer; K. West

Novel optical properties of semiconductor quantum wires

J. S. Weiner, G. Danan, A. Pinczuk, J. Valladares, L. N. Pfeiffer, K. West

Research output: Contribution to conference › Paper › peer-review

Abstract

Optical properties of modulation-doped semiconductor quantum wires that are greatly different from those of the 2-D systems from which they are derived are reported. The nanostructures were fabricated from a high-mobility modulation-doped GaAs/AlGaAs single-quantum-well heterostructure. The 2-D electron density and mobility were n = 2.9 × 10¹¹/cm² and 1.4 × 10⁶ cm²/V-s, respectively. Bandgap photoluminescence (PL) and PL excitation spectroscopies revealed properties of the conduction and valence band states that are not obtainable from transport or IR absorption measurements. The PL spectra and inelastic light scattering spectra are shown and discussed. The experiment demonstrated spatially separate confinement of electrons and holes in type-II multiple quantum wires.

Original language	English (US)
Pages	36-37
Number of pages	2
State	Published - 1990
Externally published	Yes
Event	17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA Duration: May 21 1990 → May 25 1990

Conference

Conference	17th International Conference on Quantum Electronics - IQEC '90
City	Anaheim, CA, USA
Period	5/21/90 → 5/25/90

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Novel optical properties of semiconductor quantum wires",

abstract = "Optical properties of modulation-doped semiconductor quantum wires that are greatly different from those of the 2-D systems from which they are derived are reported. The nanostructures were fabricated from a high-mobility modulation-doped GaAs/AlGaAs single-quantum-well heterostructure. The 2-D electron density and mobility were n = 2.9 × 1011/cm2 and 1.4 × 106 cm2/V-s, respectively. Bandgap photoluminescence (PL) and PL excitation spectroscopies revealed properties of the conduction and valence band states that are not obtainable from transport or IR absorption measurements. The PL spectra and inelastic light scattering spectra are shown and discussed. The experiment demonstrated spatially separate confinement of electrons and holes in type-II multiple quantum wires.",

author = "Weiner, {J. S.} and G. Danan and A. Pinczuk and J. Valladares and Pfeiffer, {L. N.} and K. West",

year = "1990",

language = "English (US)",

pages = "36--37",

note = "17th International Conference on Quantum Electronics - IQEC '90 ; Conference date: 21-05-1990 Through 25-05-1990",

}

TY - CONF

T1 - Novel optical properties of semiconductor quantum wires

AU - Weiner, J. S.

AU - Danan, G.

AU - Pinczuk, A.

AU - Valladares, J.

AU - Pfeiffer, L. N.

AU - West, K.

PY - 1990

Y1 - 1990

N2 - Optical properties of modulation-doped semiconductor quantum wires that are greatly different from those of the 2-D systems from which they are derived are reported. The nanostructures were fabricated from a high-mobility modulation-doped GaAs/AlGaAs single-quantum-well heterostructure. The 2-D electron density and mobility were n = 2.9 × 1011/cm2 and 1.4 × 106 cm2/V-s, respectively. Bandgap photoluminescence (PL) and PL excitation spectroscopies revealed properties of the conduction and valence band states that are not obtainable from transport or IR absorption measurements. The PL spectra and inelastic light scattering spectra are shown and discussed. The experiment demonstrated spatially separate confinement of electrons and holes in type-II multiple quantum wires.

AB - Optical properties of modulation-doped semiconductor quantum wires that are greatly different from those of the 2-D systems from which they are derived are reported. The nanostructures were fabricated from a high-mobility modulation-doped GaAs/AlGaAs single-quantum-well heterostructure. The 2-D electron density and mobility were n = 2.9 × 1011/cm2 and 1.4 × 106 cm2/V-s, respectively. Bandgap photoluminescence (PL) and PL excitation spectroscopies revealed properties of the conduction and valence band states that are not obtainable from transport or IR absorption measurements. The PL spectra and inelastic light scattering spectra are shown and discussed. The experiment demonstrated spatially separate confinement of electrons and holes in type-II multiple quantum wires.

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UR - http://www.scopus.com/inward/citedby.url?scp=0025530805&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0025530805

SP - 36

EP - 37

T2 - 17th International Conference on Quantum Electronics - IQEC '90

Y2 - 21 May 1990 through 25 May 1990

ER -

Novel optical properties of semiconductor quantum wires

Abstract

Conference

All Science Journal Classification (ASJC) codes

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