Novel high mobility Ga0.51In0.49P/GaAs modulation-doped field-effect transistor structures grown using a gas source molecular beam epitaxy

Z. P. Jiang, P. B. Fischer, S. Y. Chou, M. I. Nathan

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

A standard Ga0.51In0.49P/GaAs modulation-doped field-effect transistor (MODFET) structure and a novel Ga0.51In 0.49P/GaAs MODFET structure where the Ga0.51In 0.49P spacer layer was replaced by an undoped Al0.3Ga 0.7As layer were grown using a gas source molecular beam epitaxy. The Hall mobility of the novel MODFET's structures are 6600 and 36 400 cm 2/V s at room temperature and 77 K, respectively, which are more than twice as high as that in the ordinary Ga0.51In0.49P/GaAs MODFETs structure. The mobility is attributed to better carrier confinement and smoother heterointerface. Furthermore, it is found that both ordinary and novel MODFET's structures have small photo-persistant conductivity effects at low temperatures and that the FETs made in these materials had no threshold voltage shift at low temperatures after illumination.

Original languageEnglish (US)
Pages (from-to)4632-4634
Number of pages3
JournalJournal of Applied Physics
Volume71
Issue number9
DOIs
StatePublished - Dec 1 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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