Novel applications of Rapid Thermal Chemical Vapor Deposition for nanoscale MOSFET's

J. C. Sturm; M. Yang; C. L. Chang; M. S. Carroll

doi:10.1557/proc-525-273

Novel applications of Rapid Thermal Chemical Vapor Deposition for nanoscale MOSFET's

J. C. Sturm, M. Yang, C. L. Chang, M. S. Carroll

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 nm MOSFET's. Vertical dual-gated MOSFET's are used as a test vehicle to implement FET's of very short channel length. To realize such devices, the ability of epitaxial Si_1-x-yGe_xC_y layers for suppressing the thermal diffusion, transient enhanced diffusion, and oxidation enhanced diffusion of boron both in the Si_1-x-yGe_xC_y and in nearby Si layers is very useful. Novel gate electrodes deposited by RTCVD also showed the ability to greatly reduce boron penetration in p-type polycrystalline gates for p-channel FET's.

Original language	English (US)
Pages (from-to)	273-281
Number of pages	9
Journal	Materials Research Society Symposium - Proceedings
Volume	525
DOIs	https://doi.org/10.1557/proc-525-273
State	Published - 1998
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 15 1998

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{b4863f99d3fb4d38aa6616f9d0abfb42,

title = "Novel applications of Rapid Thermal Chemical Vapor Deposition for nanoscale MOSFET's",

abstract = "In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 nm MOSFET's. Vertical dual-gated MOSFET's are used as a test vehicle to implement FET's of very short channel length. To realize such devices, the ability of epitaxial Si1-x-yGexCy layers for suppressing the thermal diffusion, transient enhanced diffusion, and oxidation enhanced diffusion of boron both in the Si1-x-yGexCy and in nearby Si layers is very useful. Novel gate electrodes deposited by RTCVD also showed the ability to greatly reduce boron penetration in p-type polycrystalline gates for p-channel FET's.",

author = "Sturm, {J. C.} and M. Yang and Chang, {C. L.} and Carroll, {M. S.}",

year = "1998",

doi = "10.1557/proc-525-273",

language = "English (US)",

volume = "525",

pages = "273--281",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 13-04-1998 Through 15-04-1998",

}

TY - JOUR

T1 - Novel applications of Rapid Thermal Chemical Vapor Deposition for nanoscale MOSFET's

AU - Sturm, J. C.

AU - Yang, M.

AU - Chang, C. L.

AU - Carroll, M. S.

PY - 1998

Y1 - 1998

N2 - In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 nm MOSFET's. Vertical dual-gated MOSFET's are used as a test vehicle to implement FET's of very short channel length. To realize such devices, the ability of epitaxial Si1-x-yGexCy layers for suppressing the thermal diffusion, transient enhanced diffusion, and oxidation enhanced diffusion of boron both in the Si1-x-yGexCy and in nearby Si layers is very useful. Novel gate electrodes deposited by RTCVD also showed the ability to greatly reduce boron penetration in p-type polycrystalline gates for p-channel FET's.

AB - In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 nm MOSFET's. Vertical dual-gated MOSFET's are used as a test vehicle to implement FET's of very short channel length. To realize such devices, the ability of epitaxial Si1-x-yGexCy layers for suppressing the thermal diffusion, transient enhanced diffusion, and oxidation enhanced diffusion of boron both in the Si1-x-yGexCy and in nearby Si layers is very useful. Novel gate electrodes deposited by RTCVD also showed the ability to greatly reduce boron penetration in p-type polycrystalline gates for p-channel FET's.

UR - http://www.scopus.com/inward/record.url?scp=0031638944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031638944&partnerID=8YFLogxK

U2 - 10.1557/proc-525-273

DO - 10.1557/proc-525-273

M3 - Conference article

AN - SCOPUS:0031638944

SN - 0272-9172

VL - 525

SP - 273

EP - 281

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 13 April 1998 through 15 April 1998

ER -

Novel applications of Rapid Thermal Chemical Vapor Deposition for nanoscale MOSFET's

Abstract

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