Novel applications of Rapid Thermal Chemical Vapor Deposition for nanoscale MOSFET's

J. C. Sturm, M. Yang, C. L. Chang, M. S. Carroll

Research output: Contribution to journalConference article

Abstract

In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 nm MOSFET's. Vertical dual-gated MOSFET's are used as a test vehicle to implement FET's of very short channel length. To realize such devices, the ability of epitaxial Si1-x-yGexCy layers for suppressing the thermal diffusion, transient enhanced diffusion, and oxidation enhanced diffusion of boron both in the Si1-x-yGexCy and in nearby Si layers is very useful. Novel gate electrodes deposited by RTCVD also showed the ability to greatly reduce boron penetration in p-type polycrystalline gates for p-channel FET's.

Original languageEnglish (US)
Pages (from-to)273-281
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume525
DOIs
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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