Nonvolatile amorphous-silicon thin-film-transistor memory structure for drain-voltage independent saturation current

Engineering

• Thin-Film Transistor 100%
• Floating Gate 100%
• Drain Voltage 100%
• Temperature Data 33%
• Room Temperature 33%
• Crystalline Silicon 33%
• Nonvolatile Memory 33%
• Retention Time 33%
• Ten Year 33%
• Data Retention 33%
• Silicon Technology 33%
• Capacitive Coupling 33%
• Defect Density 33%
• Drain Electrode 33%

Material Science

• Thin-Film Transistor 100%
• Amorphous Silicon 100%
• Silicon 33%
• Crystalline Material 33%
• Transistor 33%
• Defect Density 33%

Keyphrases

• Voltage-independent 100%
• Data Retention Time 33%