Nonmonotonic temperature-dependent resistance in low density 2D hole gases

A. P. Mills; A. P. Ramirez; L. N. Pfeiffer; K. W. West

doi:10.1103/PhysRevLett.83.2805

Nonmonotonic temperature-dependent resistance in low density 2D hole gases

A. P. Mills, A. P. Ramirez, L. N. Pfeiffer, K. W. West

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75 Scopus citations

Abstract

The low temperature longitudinal resistance-per-square R_xx(T) in ungated GaAs/Al_xGa_1-x As quantum wells of high peak hole mobility 1.7 Õ 10⁶ cm 2 V^-1 s^-1 is metallic for 2D hole density p as low as 3.8 Õ 10⁹ cm^-2. The electronic contribution to the resistance, R_el(T), is a nonmonotonic function of T, exhibiting thermal activation, Rel(T)∝exp(-E_a/kT), for kT ≪ E_F and a heretofore unnoted decay R_el(T)∝1/T for kT> E_F. The form of R_el(T) is independent of density, indicating a fundamental relationship between the low- and high- T scattering mechanisms in the metallic state.

Original language	English (US)
Pages (from-to)	2805-2808
Number of pages	4
Journal	Physical review letters
Volume	83
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevLett.83.2805
State	Published - Jan 1 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.83.2805

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title = "Nonmonotonic temperature-dependent resistance in low density 2D hole gases",

abstract = "The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlxGa1-x As quantum wells of high peak hole mobility 1.7 {\~O} 106 cm 2 V-1 s-1 is metallic for 2D hole density p as low as 3.8 {\~O} 109 cm-2. The electronic contribution to the resistance, Rel(T), is a nonmonotonic function of T, exhibiting thermal activation, Rel(T)∝exp(-Ea/kT), for kT ≪ EF and a heretofore unnoted decay Rel(T)∝1/T for kT> EF. The form of Rel(T) is independent of density, indicating a fundamental relationship between the low- and high- T scattering mechanisms in the metallic state.",

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T1 - Nonmonotonic temperature-dependent resistance in low density 2D hole gases

AU - Mills, A. P.

AU - Ramirez, A. P.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlxGa1-x As quantum wells of high peak hole mobility 1.7 Õ 106 cm 2 V-1 s-1 is metallic for 2D hole density p as low as 3.8 Õ 109 cm-2. The electronic contribution to the resistance, Rel(T), is a nonmonotonic function of T, exhibiting thermal activation, Rel(T)∝exp(-Ea/kT), for kT ≪ EF and a heretofore unnoted decay Rel(T)∝1/T for kT> EF. The form of Rel(T) is independent of density, indicating a fundamental relationship between the low- and high- T scattering mechanisms in the metallic state.

AB - The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlxGa1-x As quantum wells of high peak hole mobility 1.7 Õ 106 cm 2 V-1 s-1 is metallic for 2D hole density p as low as 3.8 Õ 109 cm-2. The electronic contribution to the resistance, Rel(T), is a nonmonotonic function of T, exhibiting thermal activation, Rel(T)∝exp(-Ea/kT), for kT ≪ EF and a heretofore unnoted decay Rel(T)∝1/T for kT> EF. The form of Rel(T) is independent of density, indicating a fundamental relationship between the low- and high- T scattering mechanisms in the metallic state.

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Nonmonotonic temperature-dependent resistance in low density 2D hole gases

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