Noninvasive measurement of charging in plasmas using microelectromechanical charge sensing devices

Kiran Pangal, Samara L. Firebaugh, James C. Sturm

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The plasma induced charging of surfaces in a plasma during semiconductor processing has been measured noninvasively using microelectromechanical devices. We have designed, modeled, and fabricated microcantilevers to act as charge sensing probes. The devices exhibit a mechanical deformation when charged, which is probed in situ by optical techniques, or measured by optical inspection after removal from plasma. Charging voltage measurements in a parallel-plate reactive-ion-etching reactor show that more charging is evident at the electrode edge, and that the charging is a strong function of input rf power, chamber pressure, and flow rate of gases.

Original languageEnglish (US)
Pages (from-to)1471-1473
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number10
DOIs
StatePublished - Sep 2 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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