Noncollinear spin valve effect in ferromagnetic semiconductor trilayers

G. Xiang; B. L. Sheu; M. Zhu; P. Schiffer; N. Samarth

doi:10.1103/PhysRevB.76.035324

Noncollinear spin valve effect in ferromagnetic semiconductor trilayers

G. Xiang, B. L. Sheu, M. Zhu, P. Schiffer, N. Samarth

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report the observation of the spin valve effect in (Ga,Mn) As/p-GaAs/ (Ga,Mn) As trilayer devices. Magnetoresistance measurements carried out in the current-in-plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different postgrowth annealing conditions and spacer layer thicknesses suggest that the positive magnetoresistance peaks originate in a noncollinear spin valve effect due to spin-dependent scattering that is believed to occur primarily at interfaces.

Original language	English (US)
Article number	035324
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	76
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.76.035324
State	Published - Jul 19 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.76.035324

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abstract = "We report the observation of the spin valve effect in (Ga,Mn) As/p-GaAs/ (Ga,Mn) As trilayer devices. Magnetoresistance measurements carried out in the current-in-plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different postgrowth annealing conditions and spacer layer thicknesses suggest that the positive magnetoresistance peaks originate in a noncollinear spin valve effect due to spin-dependent scattering that is believed to occur primarily at interfaces.",

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AU - Xiang, G.

AU - Sheu, B. L.

AU - Zhu, M.

AU - Schiffer, P.

AU - Samarth, N.

PY - 2007/7/19

Y1 - 2007/7/19

N2 - We report the observation of the spin valve effect in (Ga,Mn) As/p-GaAs/ (Ga,Mn) As trilayer devices. Magnetoresistance measurements carried out in the current-in-plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different postgrowth annealing conditions and spacer layer thicknesses suggest that the positive magnetoresistance peaks originate in a noncollinear spin valve effect due to spin-dependent scattering that is believed to occur primarily at interfaces.

AB - We report the observation of the spin valve effect in (Ga,Mn) As/p-GaAs/ (Ga,Mn) As trilayer devices. Magnetoresistance measurements carried out in the current-in-plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different postgrowth annealing conditions and spacer layer thicknesses suggest that the positive magnetoresistance peaks originate in a noncollinear spin valve effect due to spin-dependent scattering that is believed to occur primarily at interfaces.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

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Noncollinear spin valve effect in ferromagnetic semiconductor trilayers

Abstract

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