Noncascaded intersubband injection lasers at λ≈7.7 μm

Claire Gmachl, Federico Capasso, Alessandro Tredicucci, Deborah L. Sivco, Albert L. Hutchinson, S. N.George Chu, Alfred Y. Cho

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Abstract

The realization of the first noncascaded intersubband injection lasers based on a single optical transition is reported. The unipolar lasers are based on an active region consisting of three InGaAs quantum wells closely coupled by thin AlInAs barriers. The lasers emit at λ≈7.7μm wavelength and operate in pulsed mode up to 110 K. Peak power levels of 20 mW at 10 K and 4 mW at 110 K are obtained. The low-temperature threshold current density is 25.6 kA cm-2 in good agreement with calculations. Several advantages arise from this novel type of intersubband laser. First, only few layers are necessary to build the active region, simplifying sample preparation. Second, low operating voltages can be achieved, which is essential for many applications. Finally, the noncascaded intersubband laser allows studying fundamental properties of quantum cascade lasers without possible artifacts introduced by the sequential stacking of many active regions.

Original languageEnglish (US)
Pages (from-to)3830-3832
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number26
DOIs
StatePublished - Dec 1 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Gmachl, C., Capasso, F., Tredicucci, A., Sivco, D. L., Hutchinson, A. L., Chu, S. N. G., & Cho, A. Y. (1998). Noncascaded intersubband injection lasers at λ≈7.7 μm. Applied Physics Letters, 73(26), 3830-3832. https://doi.org/10.1063/1.122908