Nonactivated transport of strongly interacting two-dimensional holes in GaAs

Jian Huang; D. S. Novikov; D. C. Tsui; L. N. Pfeiffer; K. W. West

doi:10.1103/PhysRevB.74.201302

Nonactivated transport of strongly interacting two-dimensional holes in GaAs

Jian Huang, D. S. Novikov, D. C. Tsui, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report on the transport measurements of two-dimensional holes in GaAs field-effect transistors with record low densities down to 7× 108 cm-2. Remarkably, such a dilute system (with Fermi wavelength approaching 1 μm) exhibits a nonactivated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly interacting regime.

Original language	English (US)
Article number	201302
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	74
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.74.201302
State	Published - 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.74.201302

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abstract = "We report on the transport measurements of two-dimensional holes in GaAs field-effect transistors with record low densities down to 7× 108 cm-2. Remarkably, such a dilute system (with Fermi wavelength approaching 1 μm) exhibits a nonactivated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly interacting regime.",

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Nonactivated transport of strongly interacting two-dimensional holes in GaAs

Abstract

All Science Journal Classification (ASJC) codes

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